<!-- Insert the tool description here -->
The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition ([[PECVD]]) tool with standard operating temperatures of 200-400C. Chamber A is configured for highly conformal [[Tetraethyl orthosilicate|TEOS]] (SiO<sub>2</sub>) film deposition, but is not available for processing at this time. Chamber B is configured for silicon dioxide [[Silicon dioxide|(SiO<sub>2</sub>)]] and amorphous silicon [[Amorphous Silicon|(a-Si)]] film deposition with boron and phosphorous doping options. Chamber C is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]], and oxynitride ([[Oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]) films.
*Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).
==System Overview=='''Full system overview document can be found at:''' [https://docs.google.com/document/d/1Prm374eY-Wve4NbPmDy8i4fTEOGpgaSfCT-VfP_EYgM/edit?usp=sharing System_Overview]
**Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
* Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
* Single frequency RF – 1000 watts @ 13.56Mhz
* Lamp heated for 200-400C process temperatures
* This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
Substrate Materials: ** Silicon ** High Purity Fused Silica wafers as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
<!--* Wafer type
* Any mounting?