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Plasmatherm 790/Processes/L nit200

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==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 5.6 Å/sec
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 50 ± 50 MPa
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
==Parameters==
|-
| Temperature
| 350°C|-|} ==Capabilities=={| class="wikitable" border="1" style="text-align: center"|-! Parameter! |-| Deposition Rate| 5.6 Å/sec|-| Index of Refraction| 2.00 ± 0.02|-| Stress| 50 ± 50 MPa200°C
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
 
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally L_nit200 is tested on a 100 mm Si wafer. The results can be seen below.
 
{{expand section|need the chart}}
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