|authors =
}}
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 4.3 Å/sec
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 50 ± 50 MPa
|-
|}
Qualification is done with a 5 minute run, max allowed thickness of 2µm. This recipe has also show to work as a KOH mask.
==Parameters==
|-
|}
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 4.3 Å/sec
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 50 ± 50 MPa
|-
|}
Qualification is done with a 5 minute run, max allowed thickness of 2µm. This recipe has also show to work as a KOH mask.
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
{{expand section|need the chart}}