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SPR 220 7.0

241 bytes added, 2 years ago
=Process=
# Dehydrate and apply HMDS
# Spin#* [[CEE 200X photoresist spinner 1]], 10um recipe#* [[ACS 200 cluster tool]], 10um recipe with external syringe#* [[CEE 100CB photoresist spinner]], manual syringe at ~____rpm
# Soft bake
#*Use 2 Hotplates - 90°C 30 seconds @ 90°C, sec → 115°C 6 minutes (360 seconds) at 115°Cmin. Move quickly between hotplates to so wafer does not cool. #* Let sample cool in a cassette or somewhere it can cool slowly. , NOT on cold metal table. Cooling the wafer too quickly can cause the resist to crack.# Wait ≥ 20 min(rehydration)
# Expose
#* MA/BA 6 - Aligner -26 sec (silicon)# Wait ≥60 ≥ 60 min(outgassing)# Post Exposure Bake 115°C for #*Use 2 Hotplates - 90°C 30 seconds @ 90°C, sec → 115°C 3 minutes (180 seconds) at 115°Cmin. Move quickly between hotplates to wafer does not cool. #*Let sample cool in a cassette or somewhere it can cool slowly. , NOT on cold metal table. Cooling the wafer too quickly can cause the resist to crack.
# Develop
#* ACS - AZ300 - ?? sec
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