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Physical vapor deposition

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[[{{PAGENAME}}|Physical vapor deposition (PVD)]] is a type of deposition where source materials are transformed into a vapor or plasma using a physical process (typically heating or physical bombardment.) The vapor then moves towards a substrate where it condenses on the substrate surface.
More details: [http://lnf-wiki.eecs.umich.edu/wiki/User_Resources#LNF_Tech_Talks_.28technology_seminar_series.29 LNF Technology seminarTech Talks]: PVD February 27, 2015: video recording and complete slides are available.
==Equipment==
==Technologies==
There are a variety of Physical Vapor deposition techniques including Pulsed Laser and Pulsed Electron Deposition, Cathode Arc depostion and many more techniques. The two forms of PVD used in the LNF are Evaporation and Sputter Deposition.
===Evaporation===
Evaporation is the method where source materials are heated to high temperatures where they melt and then evaporate or sublimate into a vapor. These atoms then precipitate into solid form onto surfaces, coating everything in the chamber, within line of sight, with a thin layer of the source material. Typically this deposition is done in a high vacuum chamber to minimize gas collisions of the source material on its way to the substrate and to reduce unwanted reactions, trapped gas layers and heat transfer.
The atoms in the vapor from evaporation have only thermal energy and strike the substrate with little or no kinetic energy and heat transfer from the hot sources to the sample is dominated by light radiation. The evaporators in the LNF are dome/liftoff tools with long throw distances with cold walled chambers and small/centered point sources. This means that, with the directionality of the evaporation, the material will strike the substrate as a normal angle and, with low heat transfer, the substrates do not get very hot as the films is deposited. This makes them ideal for liftoff applications, depositions where the substrates cannot handle any plasma heating and thicker films. They are poorly suited for any application requiring sidewall coverage or controlled stress or stoichiometry.
===Sputter deposition===
{{main|Sputter deposition}}
Sputter deposition (sputtering) involves exposing a target material to a plasma (typically Ar) which creates accelerated of ions and electrons that are used to "knock" off the target material into and make a cloud of source atoms. The source vapor then condenses onto the substrate forming a thin film.
Sputtering creates energetic atoms that move and collide as they travel thru the gas plasma towards the substrate. These atoms therefore come in at various angles and hit the substrate with some energy defined by the gas pressure and target voltage. Because of the non-normal nature of the plasma, sputtering does coat the sidewalls of the features on the substrate and the kinetic energy of the atoms also causes heating of the substrate during deposition. The heating and sidewall coverage make sputtering less desirable for liftoff applications but more useful when [[conformality|conformal]] coatings are needed. Film stress and chemistry can also be better tuned in sputtering using plasma power/pressure settings and by injecting reactive gasses during deposition.
==Figures of merit==
Bias can increase the energy of incoming atoms and change the stress of the film. Also, bias can cause collisions at the substrate level and redeposit atoms so it can be used to try and increase sidewall coverage.
 
==General Film Characteristics==
PVD films in generaly are dominated by island nucleation with low diffusion that then transforms into vertical fibers or columnar growth. Unless there is heating to temperatures that approach 50-70% of the melting point, the growth will not be crystalline with large grains. Evaporation typically grows with fibrous, domed structures while sputtering, which has a bit more energy and resputtering, approaches columnar growth.
 
If we combine the morphologicaly nature of the film with other factors (source size, gas collisions/mean free path and deposition angle) we can describe general trends in the film:
 
{| class="wikitable"
! style="font-weight: bold;" |Evaporation
! style="font-weight: bold;" |Sputtering
|-
|'''Low Ion Energy'''
* Low heating/bombardment
* Pinholes at lower thicknesses
* Less energy for reactive films
|'''Higher Ion Energy'''
*Often denser films, better adhesion, smaller grain size
*Easier to make reactive films using injected gas.
|-
|'''High Vacuum Process'''
*Higher directionality, poor step coverage
*Better for liftoff
*Lower impurity and less gas trapping
*Only optical/radiative heating
|'''Low Vacuum Process (process gas pressure)'''
*Less Directionality = better step coverage
*Chance of more gas entrapment in film
*Higher heat from plasma
|-
|'''Point Source''' - poorer uniformity
|'''Larger source''' - better uniformity
|-
|Rates dependent on melting point + vapor pressure - '''difficult to do alloys''' (co-dep recommended.) Some compounds dissociate with heating.
|Components typically sputter at similar rates when targets are alloyed to start with. Often knock off '''compounds as molecules'''.
|}
==See also==
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser
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