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{{#vardefine:restriction|0}} <!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals, 4 = varies -->
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Aluminum is a metal that is a silvery-white, soft, non-magnetic and ductile in the boron group.
 ==Processing ToolsEquipment==
Process technologies that can be used to deposit/pattern this material. If this is a substrate, refer to what tool/process restrictions there may be and possibly remove the following sub-sections.
===Deposition Equipment===
*[[Lab 18-2]]
*[[Enerjet Evaporator]]
*[[Angstrom Engineering Evovac Evaporator]]
*[[PVD 75 Proline]]
===Deposition Equipment===
====[[Atomic_layer_deposition|Atomic Layer Deposition (ALD)]]====
Atomic layer deposition (ALD) is a type of chemical vapor deposition (CVD) where the reactions are limited to the surface of the object being coated. Instead of flowing two or more gasses into the chamber and letting them react on or near the surface of the substrate as in CVD, in ALD the individual chemical components are introduced to the deposition chamber one at a time. Because the reaction is surface-limited, ALD creates extremely conformal films with well controlled thickness. Unfortunately, in order to limit CVD in the chamber, gasses must be pumped out completely between each dose, making the process very slow and only useful for very thin films.
====[[Electron_beam_evaporation|E-beam evaporation]]====
Electron beam evaporation (e-beam evaporation) is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a tungsten filament under high vacuum. The accelerated electrons strike the target and melt/sublimate the material to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber (within line of sight) with a thin layer of the anode material.
====[[Sputter_deposition|Sputter deposition]]====
Sputter deposition is a physical vapor deposition method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically argon). The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
===Etching Equipment===
*[[Acid Bench 12]] - maintained tank*[[Acid Bench 73]] - Beaker*[[Acid Bench 80]] - Beaker*[[LAM 9400]] ===Characterization Equipment===*[[Wet EtchingDektak XT]] ==Applications==*Aluminum is a commonly deposited metal in the lab. It has a high reflectivity for optical devices. ==Processes=====Depositoin Processes===*[[Electron_beam_evaporation|E-beam evaporation]] *[[Sputter_deposition|Sputter deposition]] ===Etch Processes===*[[Wet etching|Wet etching]]**Wet etching can be used to etch aluminum using [[Aluminum Etch]]**at [[Acid Bench 12]] - maintained tank**, [[Acid Bench 73]] - Beaker, and [[ Acid Bench 80]]. **[[Acid Bench 82Reactive ion etching]] - Beaker ===Characterization Processes===*The profilometer can be used to measure the thickness of your deposition.
*'''Etch rates for micromachining processing'''
*'''Etch rates for micromachining processing-Part II'''
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