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<!-- Make sure to add any other relevant categories -->{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}{{warning|This page has not been released yet.}}{{Infobox process
|image =
|caption =
|mask = not typical
|chemicals =
|gases = [[Sulfur hexafluoride|SF<sub>6</sub>]], [[Oxygen|O<sub>2</sub>]]
|created =
|modified =
|authors =
}}
'''{{SUBPAGENAME}} ''' (previously known as '''LNF Si Thinning Etch''') is an SF<sub>6</sub> based process intended for isotropic thinning of Si wafers for device release. It does not have high uniformity, but has good selectivity to other materials.
==Procedure==
|-
! Parameter
! Dep*
! Etch
! Cooldown
|-
| ICP Power
| ?
| 0 W
| 2800 W
|-
| Bias Power| ? W(HF)
| 0 W
|-| Bias Pulsing| ?| N/A5 W
|-
| Pressure
| ?colspan="2" | ?100 mTorr
|-
| SF<sub>6</sub> Flow
| colspan="2" 0 sccm| ? 450 sccm
|-
| O<sub>2</sub> Flow
| 0 sccm| 45 sccm|-| Ar Flow|colspan="2"| ? 200 sccm
|-
| Time
| 40 s
| 20 s
|-
| Chuck Temperature
| colspan="2" | 20°C</big>
|}
<nowiki>*</nowiki> Dep step is used as a cooldown (no plasma) for temperature control.
==Capabilities==
|-
| Silicon dioxide
| ? 38 Å/min| ?9%
|-
| Silicon nitride
| ?150 Å/min | ?11%|-| Low stress nitride| 120 Å/min | 10%
|-
| SPR 220
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