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<!-- Make sure to add any other relevant categories -->{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}{{warning|This page has not been released yet.}}{{Infobox process
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'''{{SUBPAGENAME}}''' (previously known as '''LNF si thinning etch - slow 1''') is an SF<sub>6</sub> based process intended for isotropic thinning of Si wafers for device release.
==Procedure==
| ICP Power
| W
| ?600
|-
| Bias Power(HF)
| W
| ?|-| Bias Pulsing| Hz| 40 Hz - 80%30
|-
| Pressure
| mTorr
| ?15
|-
| SF<sub>6</sub> Flow
| sccm
| ?300
|-
| Ar Flow
| sccm
| ?100|-| Chuck Temperature| °C| 10
|}
|-
| Silicon dioxide
| ? 240 Å/min| ?7%
|-
| Silicon nitride
| ?700 Å/min| ?2%|-| Low stress nitride| 590 Å/min| 2%
|-
| SPR 220
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