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STS Pegasus 4/Processes/LNF Si Thinning 1

165 bytes added, 2 years ago
|-
! Parameter
! Dep*
! Etch
! Cooldown
|-
| ICP Power
| ?
| 0 W
| 2800 W
|-
| Bias Power| ? W(HF)
| 0 W
|-| Bias Pulsing| ?| N/A5 W
|-
| Pressure
| ?colspan="2" | ?100 mTorr
|-
| SF<sub>6</sub> Flow
| colspan="2" 0 sccm| ? 450 sccm
|-
| O<sub>2</sub> Flow
| 0 sccm| 45 sccm|-| Ar Flow|colspan="2"| ? 200 sccm
|-
| Time
| 40 s
| 20 s
|-
| Chuck Temperature
| colspan="2" | 20°C</big>
|}
<nowiki>*</nowiki> Dep step is used as a cooldown (no plasma) for temperature control.
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