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<!-- Make sure to add any other relevant categories -->{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}{{warning|This page has not been released yet.}}{{Infobox process
|image =
|caption =
|mask = not typical
|chemicals =
|gases = [[Sulfur hexafluoride|SF<sub>6</sub>]], [[Oxygen|O<sub>2</sub>]]
|created =
|modified =
|authors =
}}
'''{{SUBPAGENAME}} ''' (previously known as '''LNF Si Thinning Etch''') is an SF<sub>6</sub> based process intended for isotropic thinning of Si wafers for device release. It does not have high uniformity, but has good selectivity to other materials.
==Procedure==
|-
| Silicon dioxide
| ? 38 Å/min| ?9%
|-
| Silicon nitride
| ?150 Å/min | ?11%|-| Low stress nitride| 120 Å/min | 10%
|-
| SPR 220
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