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STS Pegasus 4/Processes/LNF O2 Descum

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===Etch rate and uniformity===
All of the etch rates below (with the exception of photoresist) are characterized using LPCVD or thermal furnace films.
{| class="wikitable" border="1" style="text-align: center"
|-
|-
| Silicon nitride
| ?22 Å/min| ?5%|-| Low stress nitride| 20 Å/min| 5%
|-
| Silicon
| ?15 Å/min| ?5
|}
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