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|-
| Silicon
| ? 0.4 µm/min
| ?%
|}
! Etch Rate
! Uniformity
|-
| SPR 220
| 110 Å/min
| 8%
|-
| Silicon dioxide
|-
| Silicon nitride
| ?92 Å/min| ?13%
|-
| SPR 220Low stress nitride| 110 80 Å/min| 812%
|}
===Etch profile===
Unknown* Undercut: 80-100 nm* Sidewall angle: 87-89° (loading dependent){{note|This recipe exhibits passivation breakthrough at the top corner of the feature (see image at top of page).This appears to go away for large open areas (isolated lines), but if this will be detrimental to your process, please consider another tool for polysilicon etches}}
==Limitations==
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser, Bureaucrats, Interface administrators, Administrators, Widget editors
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