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STS Pegasus 4/Processes/LNF Recipe 2

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[[Category:Processes]]{{Infobox process
|image = STS Pegasus_4_Recipe_2_2_um.jpg
|caption = Recipe 2 for 20 min, 2 µm Trench
}}
This recipe '''{{SUBPAGENAME}}''' is designed for deep and through wafer etching of small (1-500 μm) features on masks with a low exposed area (<20%). Undercut and scalloping is larger than LNF Recipe 1, but etch rates are higher (4-13 μm/min).
==Procedure==
===Mask Selectivity===
* Photoresist Etch Rate
** [[SPR 220]]: 610 400 Å/min
* [[SiO2|SiO2]] Etch Rate
** Thermal oxide: 155 Å/min
** LTO: 185 Å/min
** PECVD: unknown
* [[Silicon nitride]] Etch Rate
** LPCVD Nitride: 168 Å/min
** LPCVD Low Stress Nitride: 108 Å/min
 
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