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STS Pegasus 6

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{{#vardefine:toolid|14031}}{{#vardefine:technology|DRIE}}{{#vardefine:restriction|2}}{{infobox equipment
|manufacturer = [http://www.spts.com/ SPTS Technologies Ltd.]
|model = Pegasus
|size = 150 mm
|gases = [[Ar|Ar]], [[C4F8|C<sub>4</sub>F<sub>8</sub>]], [[O2|O<sub>2</sub>]], [[SF6|SF<sub>6</sub>]]
|overview = [https://docs.google.com/document/d/1y4T8TsG121BpsmMuF4xN5vlqkvXK5AOLQUzZWGPn51U/preview [{{PAGENAME}}#System overview | System Overviewoverview]]|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/10E3Ez04ZIe0-68K5jSJCjzB26l2UW0vUySu4fgbQMXQ1cvr1FTl9msRafNlV92n2P8mCiYxMw1PMev2LYvjNtzs/preview SOPUser manual]
|processes = [[{{PAGENAME}}/Processes|Supported Processes]]
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processesprocesses]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}
The SPTS Pegasus 6 [[{{PAGENAME}}]] is a [[DRIE|Deep reactive ion etch Reactive Ion Etch (DRIE)]] tool manufactured by [http://www.spts.com/ SPTS Technologies]. It is used to etch for fast, high aspect ratio anisotropic etching of 6" (150 mm) [[silicon ]] wafers using the [https://patents.google.com/patent/US5501893A/en Bosch ] process. It has a high power [[Plasma processing/Inductively coupled plasma|ICP]] source and is also capable of fast (over 20 μm/min)slow, high aspect ratio (up to 100:1) [[Isotropy|anisotropic]] controlled etching of silicon. Fast-actingwith minimal undercut, high precision [[MFC]]s and [[throttle valve|VAT pendulum valve]] and a high capacity [[Vacuum pump#Turbomolecular pump|turbo pump]] provide fast switching times (down to 1s)sidewall roughness, enabling reduced undercut and sidewall roughness. Subnotching; sub-micron feature etching has been demonstrated (down to 100 nm linewidth). Etch rate varies with feature size and density, so a characterization run is strongly recommended with any new mask.
==Announcements==
* High selectivity to photoresist and [[SiO2|SiO<sub>2</sub>]]
==System Overviewoverview=====Hardware Detailsdetails===
*Gases
** High Precision Fast Acting Chamber Mounted MFC's
===Substrate Requirements===
* The {{PAGENAME}} is equipped to handle 6” (150 mm (6"wafers) wafers** Pieces and up to 3 mm thick. All smaller wafers can samples must be mounted to a carrier wafer at the [[. All standard major and minor flats and full-round wafers are allowed. ====Sample mounting===={{see also | Sample Mounting Station]]mounting}} * If your sample and process meet any of the etch will leave less than 100 µm remainingfollowing criteria, you MUST mount your sample to a 4” carrier wafer ''must'' be used: * Sample size is smaller than a 6” (150 mm) wafer* Substrate material is non-conducting (e.g. glass)* Sample/carrier thickness is less than 100 μm* Remaining thickness after etch is less than 100 μm{{note|Etch depth must be conductive, or a semiconductor calculated for wafer the deepest feature. An etch rate test should be performed to clamp on electrostatic chuckdetermine this for each process and mask design.|reminder}}** [[Pyrex]] glass with For all standard (Bosch process) recipes, an Si layer on top has workedSiO2 coated carrier is required, unless otherwise instructed by a tool engineer. For non-bosch process recipes, create a helpdesk ticket and staff will help you determine the appropriate material. 
===Material Restrictions===
[[File:Etch_material_layers.png|right|diagram of typical material stack during an etch]]The {{PAGENAME}} is designated as a [[{{#switch: {{#var:restriction}} | 1 = CMOS Clean | 2 = Semi-Clean| 3 = Metals | 4 = General| Undefined}}]] class tool. A full list of approved materials is included at the end of this section. In addition to the restrictions in this list, materials can be classified into four categories, detailed below: materials that may be '''etched''', materials that can be used as '''masks''', '''etch stop''' materials, and '''buried''' materials. Use of any material outside of these conditions requires approval by the LNF staff via a helpdesk ticket. ====Materials etched====The STS Pegasus 4 is intended for etching single crystal [[silicon]]. While it is capable of etching silicon dioxide, silicon nitride, and poly-silicon, there are other tools at the LNF with better performance for these materials. There are certain restrictions for where these materials may be deposited, as detailed in the approved materials list. ====Mask materials====This includes any material that will be exposed to the plasma for the majority of the process. The most common mask materials are [[photoresist]] and [[silicon dioxide]]. [[Silicon nitride]] is also allowed, although it has not been characterized. There are certain restrictionsfor where these materials may be deposited, as detailed in the approved materials list. ====Etch stop materials====This includes any material that will be exposed briefly to the plasma. All materials listed in the approved materials list on the wiki are allowed, including approved mounting materials. ====Buried materials====These materials may be present on the sample, but may not be exposed to the plasma. They may be covered by the mask or on the back of the sample, provided that the sample is mounted to a carrier wafer. Materials listed in the approved materials list on the wiki are allowed. ====Approved materials====Below is a list of approved materials for the tool. ''Approved'' means the material is allowed in the tool under the conditions described above. If a material is not listed, please create a helpdesk ticket or email [mailto:info@umich.edu info@lnf.umich.edu] for any material requests or questions. <div class="NavFrame" style="font-size:100%;margin:0;border-style:none;padding:0;"> <div class="NavFrame" style="border-style:solid;background:#fff;padding:0.2em;"> <div class="NavHead" style="background:#ddd;text-align:center;">{{Big|Approved materials}}</div> <div class="NavContent" style="text-align:left;">{{#widget:ApprovedMaterials|toolid={{#var:toolid}}{{{1|}}}|header=N}}</div> </div></div>
==Supported Processes==
==Standard Operating Procedure==
'''[https://drive.google.com/file/d/19IFXiNNWGF2U1n90bp0SGgTK1GLJXyFt/view?usp=sharing PDF Copy]''' {{#widget:GoogleDoc|key=10E3Ez04ZIe0-68K5jSJCjzB26l2UW0vUySu4fgbQMXQ1cvr1FTl9msRafNlV92n2P8mCiYxMw1PMev2LYvjNtzs}}
==Checkout Procedure==
<!-- Describe the Follow this procedure to receive authorization to run supported processes. Practicing with an authorized user or staff member prior to checkout procedure for the toolis strongly encouraged. For example: --> # Complete the [[Sample_mounting#Training_modules|sample mounting course]]. If you have already completed this for another tool, you do not need to complete it again.# Read through the Standard Operating Procedure User Manual above.# Accurately complete the [https://docs.google.com/forms/d/e/1FAIpQLScckma-M-SW0B3ZiY_OpIHgq3lk445RuX1WryRefSkzmzh1Jg/viewform checkout quiz]. You may retake as necessary until all answers are correct.
# Complete the [https://docs.google.com/forms/d/1dbMYfNd4zqoT2h7xhpfFVNnMwb8EXUaWjqs8JZtpRjY/viewform training request form].
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Tickethelpdesk ticket] requesting traininga checkout session.# A tool engineer Authorization will schedule a time for initial training.# Practice with your mentor or another authorized user until you are comfortable with be provided pending successful completion of the quiz and demonstration of proper tool operation.<!--# Complete use in the SOP quiz [<link> here].--># Schedule a checkout session with presence of a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
==Maintenance==
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser, Bureaucrats, Interface administrators, Administrators, Widget editors
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