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--> {{#vardefine:technology|DRIE}} <!--
Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals
--> {{#vardefine:restriction|2}}{{infobox equipment
|image = 14021.jpg
|manufacturer = [ SPTS Technologies Ltd.]
|model = APS
|caption =
|materials = [[silicon dioxide|SiO<sub>2</sub>]]<br>[[Fused silica]]<br>[[PyrexBorosilicate glass]]<br>[[Quartz]]
|mask = [[SPR 220]]<br>[[KMPR]]<br>[[Polysilicon]]
|size = 150 mm
|chemicals =
|gases = [[Ar]], [[He]], [[C4F8|C<sub>4</sub>F<sub>8</sub>]], [[O2|O<sub>2</sub>]], [[SF6|SF<sub>6</sub>]], [[CF4|CF<sub>4</sub>]], [[Hydrogen|H<sub>2</sub>]]
|overview = [ [{{PAGENAME}}#System overview | System Overviewoverview]]|sop = [ SOPUser manual]
|processes = [[{{PAGENAME}}/Processes|Supported Processes]]
|userprocesses = [[LNF_User:{{PAGENAME}}_user_processes|User Processes]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
The SPTS APS Dielectric Etch tool [[{{PAGENAME}}]] ('''STS Glass Etcher''') is an [[Plasma processing/Inductively coupled plasma|ICP]] [[RIE]] tool manufactured by [ SPTS Technologies]. It is used to etch 6" for anisotropic etching of silicon-based dielectrics (150 mm) [[silicon dioxide]], [[silicon nitride]], [[glass]], and [[quartz]] wafers). It has a high power [[Reactive ion etching#DC bias|RF bias]] supply for generating ion bombardment can etch thin film oxide and nitride up to enhance etch rate8 μm thick with 90° ± 0. A high capacity [[Vacuum pump#Turbomolecular pump|turbo pump]] and advanced ICP source allow for very low pressure (1-10 mTorr) plasma processing, improving sidewall verticalityangles. Very deep (100 μm) etches have been performed on [[fused silica]] and quartz substrates. It can also etch thin film oxide up to 8 μm thick with 90° ± 0.5° sidewall angles. Sub-micron feature etching has also been demonstrated (down to 100 nm linewidth). The tool will only accept 6” wafers - all smaller samples must be mounted to a carrier wafer.
The STS APS system is designed for [[Deep reactive ion etching#DGRIE|deep glass RIE]] but is also capable of and high aspect ratio thin film silicon-based dielectric etching at submicron resolution.
* SiO<sub>2</sub> films
===Substrate Requirements===
* The {{PAGENAME}} is equipped to handle 6” (150 mm (6"wafers) wafers** Pieces and up to 3 mm thick. All smaller wafers can samples must be mounted to a carrier wafer at . All standard major and minor flats and full-round wafers are allowed. ====Sample mounting===={{see also | Sample mounting}} If your sample and process meet any of the [[following criteria, you MUST mount your sample to a 4” carrier wafer: * Sample Mounting Station]]size is smaller than a 6” (150 mm) wafer* Substrate material is non-conducting (e.g. glass)* Sample/carrier thickness is less than 100 μm* Remaining thickness after etch is less than 100 μm{{note|Etch depth must be conductive, or a semiconductor calculated for wafer the deepest feature. An etch rate test should be performed to clamp on electrostatic chuckdetermine this for each process and mask design.|reminder}}** [[Pyrex]] glass with an For most standard recipes, a bare Si layer on top has workedcarrier is recommended, unless otherwise instructed by a tool engineer. If you are unsure what carrier to use, create a helpdesk ticket and staff will help you determine the appropriate material.
===Material restrictions===
[[File:Etch_material_layers.png|right|diagram of typical material stack during an etch]]
The {{PAGENAME}} is designated as a [[{{#switch: {{#var:restriction}}
| 1 = CMOS Clean
| 2 = Semi-Clean
| 3 = Metals
| 4 = General
| Undefined
}}]] class tool. A full list of approved materials is included at the end of this section. In addition to the restrictions in this list, materials can be classified into four categories, detailed below: materials that may be '''etched''', materials that can be used as '''masks''', '''etch stop''' materials, and '''buried''' materials. Use of any material outside of these conditions requires approval by the LNF staff via a helpdesk ticket.
{{note|Samples that will later be processed in a CMOS clean furnace will require two PFC steps prior to the furnace step. The first should be performed in [[RCA Bench 81]] and the second in [[PFC Bench 01]].|reminder}}
 ====Materials etched====This tool is intended for etching [[silicon dioxide]] and [[silicon nitride]]. There are certain restrictions for where these materials may be deposited, as detailed in the approved materials list. ====Mask materials====This includes any material that will be exposed to the plasma for the majority of the process. The most common mask material is [[photoresist]]. [[polysilicon|Poly/amorphous silicon]] can also be used. There are certain restrictions for where these materials may be deposited, as detailed in the approved materials list. ====Etch stop materials====This includes any material that will be exposed briefly to the plasma. All materials listed in the approved materials list on the wiki are allowed, including approved mounting materials. ====Buried materials====These materials may be present on the sample, but may not be exposed to the plasma. They may be covered by the mask or on the back of the sample, provided that the sample is mounted to a carrier wafer. Materials listed in the approved materials list on the wiki are allowed. ====Approved materials====Below is a list of approved materials for the tool. ''Approved'' means the material is allowed in the tool under the conditions described above. If a material is not listed, please create a helpdesk ticket or email [] for any material requests or questions. <div class="NavFrame" style="font-size:100%;margin:0;border-style:none;padding:0;"> <div class="NavFrame" style="border-style:solid;background:#fff;padding:0.2em;"> <div class="NavHead" style="background:#ddd;text-align:center;">{{Big|Approved materials}}</div> <div class="NavContent" style="text-align:left;">{{#widget:ApprovedMaterials|toolid={{#var:toolid}}{{{material restrictions1|}}}|header=N}}</div> </div></div>
==Supported processes==
The primary recipes for the STS Glass Etcher are used for deep oxide/quartz/silica etching. The [[/Processes/uk submicron etch|uk submicron etch]] is designed for thin-film (up to 8 μm) etching of oxide. Feature sizes can range from 100 nm to a full wafer. The [[/Processes/Fused silica etch|Fused silica etch]] is designed for deep etching of fused silica, quartz, and glass. More details on the supported processes can be found on the [[/Processes/]] page.
<!-- REVIEW THIS PARAGRAPH!!!!!In addition to the supported recipesthese, there are recipes available (largely uncharacterized) for this tool has a wide variety number of materials, including [[Metals#Nonuser-reactive|non-reactive metals]], [[PZT]], and [[Silicon carbide]]created recipes for specific processes. Some of these recipes are documented on [[LNF User:{{BASEPAGENAME}} User Processes|{{BASEPAGENAME}} user processesUser Processes]]. If you have a requirement outside those covered byFor more information, or are not getting satisfactory results from please contact the tool engineers via the standard recipes we strongly advise you to make [{{#var:toolid}} helpdesk ticketsystem] to consult a tool engineer on what steps to take to improve your etch results. -->
==Standard operating procedure==
<!-- '''[ PDF Copy]''' --> {{#widget:GoogleDoc|key=1q9TF5706Ru3tna5-RqTg49HHClEmpJ6vizFFcggSCJI1HRczzRCs1BpXS2tUFS6WdciAof8fkQV54OcfT0HrpSY}}
==Checkout procedure==
<!-- Update procedure after implementing request form and quiz -->
# Complete the [[Sample_mounting#Training_modules|sample mounting course]]. If you have already completed this for another tool, you do not need to complete it again.
# Read through this page and the Standard Operating Procedure User Manual above.
# Create a [{{#var:toolid}} helpdesk ticket] requesting training and attend an introductory training session with a tool engineer.
# Practice with your mentor or another authorized user until you are comfortable running the tool ''on your own''.
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