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Created page with "<!-- Make sure to add any other relevant categories --> {{Infobox process |technology = RIE |material = HfO2 |mask = Photoresist |gases = BCl<sub>3</sub> |created = October 20..."
<!-- Make sure to add any other relevant categories -->
{{Infobox process
|technology = RIE
|material = HfO2
|mask = Photoresist
|gases = BCl<sub>3</sub>
|created = October 2021
|modified =
|authors = Shawn Wright, Subhajit Mohanty
}}
[[Category:Processes]] [[Category:RIE]]
{{note|This process requires more than the standard chamber clean.|reminder}}
This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
==Etch Rates==
These were measured using 1cm pieces on a 6" Si carrier.
===Main Etch===
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
* HfO<sub>2</sub> (250°C deposition, annealed): 21 nm/min
* GaN: 2.2 nm/min (13:1)
* SPR 955:
* ZEP:
* PMMA:
* SiO<sub>2</sub>:
==Parameters==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
! Main Etch
|-
|Pressure
| 10 mTorr
|-
| TCP Power
| 400 W
|-
| Bias Power
| 20 W
|-
| V<sub>pk-pk</sub>
| ~34 V
|-
| BCl3 Flow
| 30 sccm
|-
| Time
| < 5 min
|}
==References==
# Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.
{{Infobox process
|technology = RIE
|material = HfO2
|mask = Photoresist
|gases = BCl<sub>3</sub>
|created = October 2021
|modified =
|authors = Shawn Wright, Subhajit Mohanty
}}
[[Category:Processes]] [[Category:RIE]]
{{note|This process requires more than the standard chamber clean.|reminder}}
This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
==Etch Rates==
These were measured using 1cm pieces on a 6" Si carrier.
===Main Etch===
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
* HfO<sub>2</sub> (250°C deposition, annealed): 21 nm/min
* GaN: 2.2 nm/min (13:1)
* SPR 955:
* ZEP:
* PMMA:
* SiO<sub>2</sub>:
==Parameters==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
! Main Etch
|-
|Pressure
| 10 mTorr
|-
| TCP Power
| 400 W
|-
| Bias Power
| 20 W
|-
| V<sub>pk-pk</sub>
| ~34 V
|-
| BCl3 Flow
| 30 sccm
|-
| Time
| < 5 min
|}
==References==
# Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.
