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LAM 9400/Processes/LNF HfO2

20 bytes added, 10 months ago
===Main Etch===
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
* HfO<sub>2</sub> (250°C deposition, annealedat 400°C for 1 min): 21 nm/min
* GaN: 2.2 nm/min (13:1)
* SPR 955:
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