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LAM 9400/Processes/LNF HfO2
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1 year ago
→Etch Rates
* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
* GaN: 2.2 nm/min (13:1)
* SPR 955:
12.3 nm/min
* ZEP:
11.9 nm/min
* PMMA:
24.7 nm/min
* SiO<sub>2</sub>:
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