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LAM 9400/Processes/LNF HfO2

34 bytes added, 10 months ago
* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
* GaN: 2.2 nm/min (13:1)
* SPR 955: 12.3 nm/min* ZEP:11.9 nm/min* PMMA: 24.7 nm/min
* SiO<sub>2</sub>:
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