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LAM 9400/Processes/LNF HfO2

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This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
==Procedure==
# Run etch
# Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer
==Etch RatesCharacterization==
These were measured using pieces mounted to a 6" Si carrier.
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