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LAM 9400/Processes/LNF HfO2

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==Characterization==
These were measured using pieces mounted to a 6" Si carrier.
 
===Main Etch===
Measured using pieces mounted to a 6" Si carrier.
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
* ZEP: 11.9 nm/min
* PMMA: 24.7 nm/min
 Measured as a blanket film on a 6" wafer:* SiO<sub>2</sub>:13.8 nm/min
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