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GSI PECVD

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<!-- Set the resource ID, 5 digit # found on the scheduler -->{{#vardefine:toolid|21040}}<!-- Set the Process Technology (see subcategories on Equipment page) -->{{#vardefine:technology|PECVD}}<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->{{#vardefine:restriction|2}}{{infobox equipment
|caption = GSI ULTRADEP 2000 PECVD System
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
|overview = [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview]
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP]
|processes = [https://docs.google.com/a/lnf.umich.edu/spreadsheets/d/1B7g547iesF0Z4T6NLduxVSidUuMjBIJnXk37JGhdpa416H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/preview Standard Processes]
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processes]]
|maintenance = [https://docs.google.com/document/d/1gWjGUFD0jdYEUP0Te8fmZ1pSWeNKt0VPTzQ3a7ND5Ac/preview Maintenance]
}}
The [[{{PAGENAME}}|GSI ULTRADEP 2000 ]] is a [[:Category:PECVD|Plasma Enhanced Chemical Vapor Deposition (PECVD)]] system with standard operating temperatures of 200-380°C200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], and [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]] on substrates up to 100 mm diameter.
==Announcements==
The GSI will be offline for a period of 1- 3 weeks (TBD) in August 2015 for troubleshooting process drift related issues. The P5000 PECVD and Plasmatherm 790 PECVD are excellent substitutes to meet your processing needs while the GSI is offline.
==Capabilities==
<!--A more general description of what the tool is capable of doing.-->
 * Standard recipes Oxide 200 and Oxide 380 350 are optimized for average refractive index of 1.46 +/-0.006. * Standard recipes Nitr 200 Conv and Nitr 380 350 Conv are optimized for average refractive index of 2.00 +/-0.006.* Standard recipe Oxide Oxynitride 200 LS is optimized for low stress (<60MPa 60 MPa for >1um 1 um Films) * Standard recipe Oxide 200 THIN is and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
==System Overview==
===Hardware Details===
 * Gases
**Standard Gasbox Mounted MFC's
***[[Silane|SI<sub>HSiH<sub>4</sub>]] - 300 sccm***[[Silane|SI<sub>HSiH<sub>4</sub>]] - 5 sccm***[[Oxygen|O<sub>2</sub>]] - 1000 sccm***[[Ammonia|N<sub>HNH<sub>3</sub>]] - 1000 sccm
***[[Nitrous oxide|N<sub>2</sub>O<sub>]] - 2000 sccm
***[[Nitrogen trifluoride|N<sub>FNF<sub>3</sub>]] - 500 sccm
***[[Helium|He<sub>]] - 500 sccm
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
* Pressure**Process Chamber chamber utilizes Ebara A70W dry pump, butterfly valve, and 10T 10 T Baratron.
**Load-lock utilizes Alcatel ACP 28G dry pump.
**Deposition processes operate between 1.5T to 4.5T
* Chuck**Heater block 100°C - 380°C350°C (actual substrate temperature is ~15% higher than setpoint)* RF**Comdel dual frequency generator- ***RF1 1000W : 1000 W, 13.56MHz 56 MHz***RF2 200W 420kHz: 200 W, 420 kHz
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
**420kHz 420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
===Substrate Requirements===
 * 100mm 100 mm (4") wafers and pieces * Substrate material:
**Silicon
**Quartz
**Sapphire
**Glass
**GaAs
* Aluminum carrier is used for all runs. * Maximum substrate thickness allowed is 2mm<800um (thickness + bow).
===Material Restrictions===
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|url=https://docs.google.com/spreadsheets/u/1/d/1B7g547iesF0Z4T6NLduxVSidUuMjBIJnXk37JGhdpa416H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/pubhtml?edit#gid=0&single=true 1660640889 |width=850900|height=550600
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If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system as a GSI PECVD "General Question" type ticket.
==Standard Operating Procedure==
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". -->
{{Cleanup-manual|section=SOP}}
{{#widget:GoogleDoc|key=1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc}}
==Checkout Procedure==
<!-- Describe the checkout procedure for the tool. For example: -->
 # Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overviewsection of the User Manual located at the tool.# A tool engineer will contact you to arrange coordinate a time for initial training.# One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.# Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
==Maintenance==
<!-- Describe standard maintenance/qualification tests here -->
 *Chamber maintenance is performed after every 30um75 um's of deposition.
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 
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===Process Name===
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