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Plasmatherm 790/Processes/L nit350

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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a lower stress near 25 MPa and an index at of 2.0.
[[Category:Processes]]
|material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
|chemicals =
|gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]]
|created =
|modified =
|authors =
}}
 
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 27.9 nm/min
|-
| Index of Refraction
| 1.999
|-
| Stress
| 10 MPa
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
==Parameters==
|-
| RF Power
| 100 150 W
|-
| Pressure
| 2000 1500 mTorr
|-
| NH<sub>3</sub> Flow
| N<sub>2</sub> Flow
| 160 sccm
|-
| He Flow
| 490 sccm
|-
| SiH<sub>4</sub> Flow
|-
|}
 
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| Å/sec
|-
| Index of Refraction
| 2.02
|-
| Stress
| 519 MPa
|-
| Roughness
| ?
|-
|}
 
==Limitations==
The limitations for this recipe are still being defined.
 
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.
 
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|url=https://docs.google.com/spreadsheets/d/1jDSV00jZ-1vppt2MgGRAJyXRvxEE3rJIlXtngODM9-0/pubchart?oid=815237925&format=interactive
|width=700
|height=400
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