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Plasmatherm 790/Processes/L nit350

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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a lower stress near 25 MPa and an index at of 2.0.
[[Category:Processes]]
|-
| RF Power
| 100 150 W
|-
| Pressure
| 2000 1500 mTorr
|-
| NH<sub>3</sub> Flow
| N<sub>2</sub> Flow
| 160 sccm
|-
| He Flow
| 490 sccm
|-
| SiH<sub>4</sub> Flow
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 519 50 ± 50 MPa|-| Roughness| ?
|-
|}
==Limitations==The limitations for this This recipe are still being definedhas also show to work as a KOH mask.
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally m_nit350 L_nit350 is tested on a 100 mm Si wafer. The deposition rate results can be seen below for m_nit200, 260 and 350{{#widget:Iframe|url=https://docs.google.com/spreadsheets/d/1jDSV00jZ-1vppt2MgGRAJyXRvxEE3rJIlXtngODM9-0/pubchart?oid=815237925&format=interactive|width=700|height=400|border=0}}
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