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Plasmatherm 790/Processes/L nit350

219 bytes removed, 1 year ago
|material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
|chemicals =
|gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]]
|created =
|modified =
|authors =
}}
 
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 27.9 nm/min
|-
| Index of Refraction
| 1.999
|-
| Stress
| 10 MPa
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
==Parameters==
|-
|}
 
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 4.3 Å/sec
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 50 ± 50 MPa
|-
|}
 
This recipe has also show to work as a KOH mask.
 
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
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