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Plasma etching

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{{main|Reactive ion etching}}
<stole from the RIE page, need to simplify/not be redundant>Reactive ion etching (RIE) is a high resolution mechanism for [[etching]] materials using one of the most common forms of [[Plasma plasma etching|reactive gas discharges]]. It is a highly controllable process that can process typically uses a wide variety combination of materials, including [[semiconductors]], [dielectrics]] chemically reactive elements and some [[Reactive metals|metals]]energetic ions to etch the desired material. One major advantage to RIE over other forms of etching is that the process can be designed to be highly [[Isotropy|anisotropic]], allowing for much finer resolution and higher aspect ratios.
==Plasma ashing==
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