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Reactive ion etching

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|equipment = [[:Category:RIE equipment|List of RIE equipment]]
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Reactive ion etching (RIE) is a high resolution mechanism for [[etching]] materials using [[Plasma etching|reactive gas discharges]]. It is a highly controllable process that can process a wide variety of materials, including [[semiconductors]], [[dielectrics]] and some [[Reactive metals|metals]]. One major advantage to RIE over other forms of etching is that the process can be designed to be highly [[Isotropy|anisotropic]], allowing for much finer resolution and higher aspect ratios. For a detailed overview of RIE, please review the [https://docsdrive.google.com/a/lnf.umich.edu/file/d/0B76AgohVTgqdamFiaE1mRk9mVmM/preview view?usp=sharing&resourcekey=0-yGk7A8kAmb0kQArcKPNlTQ technology workshop].
{{TOC|limit=2|clear=left}} ==Equipment==Below is a general description of the RIE equipment at the LNF. For a complete list, please see [[:Category:RIE equipment|list of RIE equipment]].<!--onlyinclude>===P5000 RIE==={{main|P5000 RIE }}The P5000 is a key 3 chamber tool designed for production etching. Chambers A and B are configured for SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> etching, where as chamber C is configured for [[polysilicon]] and amorphous silicon etching. Chambers B and C are restricted to [[CMOS clean]] devices where as chamber A is open to [[semi-clean]] devices. ===STS APS DGRIE==={{main|STS Glass Etcher}}The glass etcher excels at deep etching of [[Fused silica|fused silica]] but it also has a nearly vertical [[silicon dioxide|SiO<sub>2</sub>]] etch. It's capable of very high bias powers enabling semiconductor technology allowing IC processes it to process difficult to continue etch materials. ===LAM 9400 SE==={{main|LAM 9400}}The LAM 9400 SE is an [[ICP]] etcher configured with a wide range of gas chemistries. It is mainly used to approach etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]], [[silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[polymers|organic]] materials. ===Oxford Plasmalab System 100==={{main|Oxford Plasmalab System 100}}The oxford is another ICP etcher that also has a [[cryogenic etching|cryogenic]] chuck. By cooling the range sample down to -150°C nearly vertical etches are possible in certain materials. ===Plasmatherm 790==={{main|Plasmatherm 790}}The Plasmatherm is configured with a variety of gases so that it can etch a wide array of materials. Most recipes tend to have slow etch rates on the order of 200 Å/min which is ideal for very thin films. The tool also has few nanometersmaterial restrictions to allow it to process as many things as possible. </onlyinclude> ==Deep reactive ion etching=={{main|Deep reactive ion etching}} Deep reactive ion etching (DRIE), while often referring specifically to the [[Wikipedia:Bosch process|Bosch process]], generally is any RIE used to etch high aspect ratio (> 10:1) features. This same technology may be used simply a longer, well controlled RIE etch, or may use a specific process such as a machining [[cryogenic etching]] or the [[Wikipedia:Bosch process|Bosch process for nano and micro scale devices]]. As such For all DRIE equipment at the LNF, RIE is also key enabling technology for MEMS and nanofabricationplease refer to the [[:Category:DRIE equipment|list of DRIE equipment]].--> {{:Deep reactive ion etching}}
==Method of operation==
In most reactors, DC bias is not controlled directly, but will depend on the conductance of the plasma and the power applied to the sample.
==Deep reactive ion etching=={{main|Deep reactive ion etching}} Deep reactive ion etching (DRIE), while often referring specifically to the [[Bosch process]], generally is any RIE used to etch high aspect ratio (> 10:1) features. This may be simply a longer, well controlled RIE etch, or may use a specific process such as [[cryogenic etching]] or the [[Bosch process]]. For all DRIE equipment at the LNF, please refer to the [[:Category:DRIE equipment|list of DRIE equipment]].<!--
==Materials==
RIE can be used to etch a wide variety of materials, including dielectrics, semiconductors, polymers, and some metals. For information on etching specific materials, please review the sections below.
===Dielectric etching===
{{main|Dielectric plasma etching}}
not sure if I like where this is going... ==Equipment==Below is a general description of the RIE equipment at the LNF. For a complete list, please see [[:Category:RIE equipment|list of RIE equipment]]. ===LAM 9400 SE==={{main|LAM 9400}} The LAM 9400 SE is an [[ICP]] etcher configured with a wide range of gas chemistries. It is mainly used <I have to etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]]agree, [[silicon nitride|Si<subI think you should save this for tool pages>3</sub-->N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[polymers|organic]] materials. ===Plasmatherm 790==={{main|Plasmatherm 790}}
===Complete tool list===<categorytree mode="pages">RIE equipment</categorytree>
==See also==
* [[Plasma etching]]
* [[Plasma processing]]
*[[Plasma etching]]
*[[Plasma processing]]
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==Notes==
<footnotes>
==References==
<citationsreflist />-->
==Further reading==
 *[http://lnf-wiki.eecs.umich.edu/wiki/User_Resources#LNF_Tech_Talks_.28technology_seminar_series.29 LNF Tech Talk for RIE]* [https://docs.google.com/adocument/lnf.umich.edud/file1L5g-WyoX10ZDYI9IKdeGb32dLsOeVUgFD01yvKdj544/dedit Etching nano features with SF<sub>6</0B76AgohVTgqdamFiaE1mRk9mVmMsub>ːO<sub>2</preview RIE Workshop January 16th, 2015sub> plasma]
[[Category:RIE| ]]
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