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NP12 nanoPREP

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--> {{#vardefine:toolid|143001}} <!--
Set the Process Technology (see subcategories on Equipment page)
--> {{#vardefine:technology|Plasma Activationactivation}} <!--
Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals
--> {{#vardefine:restriction|2}}
|gases =
|overview = [[{{PAGENAME}}#System_overview | System Overview]]
|sop = [https://https://docs.google.com/document/d/1SpYgBOOTt9VrZB0aEVttLnIHDeG4bn4czIIwfaIznk4/preview SOP]
|processes = [[{{PAGENAME}}/Processes|Supported Processes]]
|userprocesses = [[LNF_User:{{PAGENAME}}_user_processes|User Processes]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}
The nP12 is an atmospheric plasma tool that generates a N<sub>2</sub> plasma which scans over the wafer surface. It is used for wafer surface modification, usually [[Plasma_activation|plasma activation]] prior to [[Wafer_bonding|wafer bonding]]. Plasma activation helps to reduce the necessary bonding temperatures in many materials and enables [[Fusion_bonding|fusion bonding]] of [[Silicon|si]] substrates.
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The nP12 is an atmospheric plasma tool that generates a N<sub>2</sub> plasma which scans over the wafer surface. It is used for wafer surface modification, usually plasma activation prior to wafer bonding. Plasma activation helps to reduce the necessary bonding temperatures in many materials and enables fusion bonding of [[Silicon|si]] substrates.
 
==Announcements==
*None at this time.
==Capabilities==
<!--A more general description of what the tool is capable of doing.-->
* 500 W direct N2 N<sub>2</sub> plasma* programmable Programmable scan speed and dose* adjustable Adjustable for various substrate thicknesses up to several mm* wafers Wafers from 10 mm pieces up to 12" 300 mm diameter
==System overview==
===Hardware details===
* N2 N<sub>2</sub> plasma
* Plasma scan of substrate surface is at atmosphere
* Programmable plasma power
===Substrate requirements===
* 10 mm pieces up to 12" 300 mm diameter wafers* Any non restricted substrate materials
* Mounting may be advisable. Discuss with a tool engineer
* Standard wafer thicknesses preferred, but wafer thickness of several mm can be adjusted for
This tool is primarily used to plasma activate the surface of Si substrates for direct wafer bonding, however it will perform surface modification of many materials. Here is a chart of characterized materials and their surface energy over time.
If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
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==Standard operating procedure==
{{cleanup-manual}}
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*Test wafers are run monthly and the static contact angle of water on the surface is checked
*The scan head height is checked or adjusted as needed
 
===Process name===
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