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Plasma etching

8 bytes added, 7 years ago
===Plasma source and power===
The plasma generation source is critical to the function of the etch. [[Plasma processing/Capacitively coupled plasmas|Capacitively]] and [[Plasma processing/Inductively coupled plasmas|inductively]] coupled RF plasmas are very common, particularly in [[RIE]], but certain applications may use microwave sources, [[Wikipedia:Electron_cyclotron_resonance|ECR]] sources, etc. Additionally, while in RIE the sample is typically placed directly under the source, sometimes the sample may be placed more indirectly from the source, such as in [[plasma ashing]].
Source power stuff
Bias power stuff
===Sample temperature===
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