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Plasma etching

260 bytes removed, 7 years ago
<excerpted from RIE so I can reference it while writing the page>Many of the same parameters used in [[Plasma etching#Parameters|that affect plasma etching]] apply to RIE, including characteristics include pressure, gas composition, and generator power. Of particular importance is the , [[plasma generation]] method (commonly a parallel plate or ICP configuration), as they have different advantages depending on the material being etchedand generator power.
===Gas composition===
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