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Plasma etching

409 bytes added, 7 years ago
Plasma ashing typically refers to the removal of organics, particularly [[photoresist]] from a sample using a plasma discharge. These processes typically use [[oxygen]] as the main etch gas and sometimes require a high temperature to enhance the reactivity.
The [[YES-CV200RFS(E)|YES-CV200RFS(E) (YES Plasma Stripper)]] is the primary plasma ashing equipment in the main cleanroom of the LNF. Its primary uses are low-temperature [[plasma descum]] and high-temperature [[photoresist stripping|stripping]] of [[photoresist]] but can also be used to etch a wide variety of polymers as well as for [[sample cleaning]] and [[surface activation]].
==Ion milling==
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