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Reactive ion etching

242 bytes added, 7 years ago
{{main|P5000 RIE}}
The P5000 is a 3 chamber tool designed for production etching. Chambers A and B are configured for SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> etching, where as chamber C is configured for polysilicon and amorphous silicon etching. Chambers B and C are restricted to [[CMOS]] clean devices where as chamber A is open to semi-clean devices.
 
===STS APS DGRIE===
{{main|STS Glass Etcher}}
 The glass etcher excels at deep etching of [[Fused silica|fused silica]] but it also has a nearly vertical SiO<sub>2</sub> etch. It's capable of very high bias powers enabling it to process difficult to etch materials.
===LAM 9400 SE===
{{main|LAM 9400}}
The LAM 9400 SE is an [[ICP]] etcher configured with a wide range of gas chemistries. It is mainly used to etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]], [[silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[polymers|organic]] materials.
 
===Oxford Plasmalab System 100==={{main|Oxford Plasmalab System 100}}The LAM 9400 SE oxford is an [[another ICP]] etcher configured with that also has a wide range of gas chemistriescryo chuck. It is mainly used By cooling the sample down to etch [[polysilicon]] but can also etch [[silicon dioxide|SiO<sub>2</sub>]], [[silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[compound semiconductors]], some [[Reactive metals|metals]], and [[-150°C nearly vertical etches are possible in most polymers|organic]] materials.
===Plasmatherm 790===
{{main|Plasmatherm 790}}
 
The Plasmatherm is configured with a variety of gases so that it can etch a wide array of materials. Most recipes tend to have slow etch rates on the order of 200 Å/min which is ideal for very thin films. The tool also has almost no material restrictions to allow it to process as many things as possible.
 
===Oxford Plasmalab System 100===
{{main|Oxford Plasmalab System 100}}
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