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Sputter deposition

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[[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting in which a high-purity source material from (called a "target" that ) is subjected to a source onto a "substrate" such as a silicon wafergas plasma (typically Ar. Resputtering is re-emission of ) The energetic atoms in this gas plasma collide with the deposited target material during the deposition process by ion or atom bombardment. Sputtered and knock off source atoms ejected from the target have a wide energy distribution, typically up which then travel to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines substrate and impact energetically on the substrates or vacuum chamber (causing resputtering)condense into a thin film
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