Difference between revisions of "AZ 12XT"

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*Exposure (see characterization data below)
 
*Exposure (see characterization data below)
 
**10-17um layers
 
**10-17um layers
***Contact Alingers 12-16 sec
+
***Contact Aligners 12-16 sec
 
***Stepper 0.22-0.24 sec, -50
 
***Stepper 0.22-0.24 sec, -50
 
**>17um  
 
**>17um  
***Contact Alingers 20-24sec
+
***Contact Aligners 20-24sec
 
*Bake
 
*Bake
 
** For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
 
** For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered

Revision as of 15:38, 19 October 2021

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About this Process
Process Details
Equipment AZ 12XT
Technology Lithography
Chemicals Used AZ 12XT, AZ 726



Az 12XT is a chemical enhanced positive tone photo resist (PR). In a chemical enhanced PR the exposure step creates a latent image and a week acid in the PR. The chemical reaction that makes the PR soluble in developer happens during the post exposure bake (PEB). This makes the length and temperature of the PEB extremely important. One of the advantages of the chemical enhance resits for thick resist is that it eliminate the waiting steps.

Users should note that this is not a DNQ resist and is not compatible with the image reversal process used in the YES-310TA.

Procedure

for 10-25um layers

  • HMDS in YES Image Reversal Oven
  • Spin AZ 12xt
  • Softbake
    • 2-4K 3 minutes on a 110°C hotplate with the lid lowered
    • 1K 4 minutes on a 110°C hotplate with the lid lowered
  • Exposure (see characterization data below)
    • 10-17um layers
      • Contact Aligners 12-16 sec
      • Stepper 0.22-0.24 sec, -50
    • >17um
      • Contact Aligners 20-24sec
  • Bake
    • For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
    • For a 2K spin - 1.5 minutes on a 90° hotplate with the lid lowered
    • For a 1K spin - 4 minutes on a 90° hotplate with the lid lowered
  • Develop on the CEE Develop stations using 726 DP 60-60
  • Hard Bake
    • For wet etching or platting hard bake at 110°C for 1 minute
  • Removal
    • For thickness <17um spins removal as normal. (ash, PRS-2000, nanostrip)
    • For thickness >17um
      • PRS-2000 at 60°C for 10-15 minutes, or
      • Ash at temp lower than 100°C to break through RIE hardened layer
      • PRS-2000 after ash to remove most of PR

Characterization

Spin Curve

AZ 12xt spin curve on the CEE 100

Characterization Matrices

  • Contact Aligners: Exposure time vs Spin Speed

Az12xt 2-4K crosssections.jpg

  • Contact Aligner: 1K spin, Softbake and PEB tests

AZ 12xt, 1k spin SB and PEB tests.jpg

  • Contact Aligner: Exposure time vs Development time. 1K spin CEE 100.

1k spin cross sections.jpg

  • Exposure time vs Focus on Stepper

EXPO cross section AZ12xt.jpeg

Wet Etch

Az12xt 10min BHF etch.jpg

Data Sheets