Difference between revisions of "AZ 12XT"

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{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}
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{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}{{Infobox process
{{warning|This page has not been released yet.}}
 
{{Infobox process
 
 
|image      =  
 
|image      =  
 
|caption    =
 
|caption    =
 
|technology = Lithography
 
|technology = Lithography
 
|material  =  
 
|material  =  
|mask      =
 
 
|chemicals  = AZ 12XT, AZ 726
 
|chemicals  = AZ 12XT, AZ 726
|gases      =
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|created    = 10/19/2021
|created    =  
 
 
|modified  =  
 
|modified  =  
 
|authors    =  
 
|authors    =  
 
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AZ 12XT is a chemical enhanced positive tone photo resist (PR). In a chemical enhanced PR the exposure step creates a latent image and a week acid in the PR. The chemical reaction that makes the PR soluble in developer happens during the post exposure bake (PEB). This makes the length and temperature of the PEB extremely important. One of the advantages of the chemical enhance resits for thick resist is that it eliminate the waiting steps. The resist holds up well in RIE, DRIE, wet etching and plating. We have seen some PR cracking after gold platting but have had no plating in the cracks or peeling of the PR.
Az 12XT is a chemical enhanced positive tone photo resist (PR). In a chemical enhanced PR the exposure step creates a latent image and a week acid in the PR. The chemical reaction that makes the PR soluble in developer happens during the post exposure bake (PEB). This makes the length and temperature of the PEB extremely important. One of the advantages of the chemical enhance resits for thick resist is that it eliminate the waiting steps.  
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 +
Users should note that this is not a DNQ resist and is not compatible with the image reversal process used in the [[Image Reversal Oven|YES-310TA]].
 +
 
 +
==Announcements==
 +
*On 1/18/22 our contact aligner lamps are being re calibrated. This may increase the required exposure by up to 22%. This page will be updated after we have time verify the new exposure times.
  
 
==Procedure==
 
==Procedure==
===for 10-17um layers===
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===for 10-25um layers===
 
* HMDS in YES Image Reversal Oven
 
* HMDS in YES Image Reversal Oven
**For Plating, Wet etching, or glass RIE etching set the oven temp to 140°C. You need to allow 40 minutes each for the oven to heat and cool.
 
**RIE etching can us HMDS applied at 90°C
 
 
*Spin AZ 12xt
 
*Spin AZ 12xt
*Bake for 3 minutes on a 110°C hotplate with the lid lowered
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**When dispensing the AZ 12xt try to spread the puddle around as you dispense. You can get good even coverage with less resist this way.
*Exposure
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**AZ 12xt is a high viscosity resist and will create stringers or cotton candy when spun.
 +
**For 4 inch or larger samples you need to knock down the stringers with a swab or acetone between samples.
 +
*Softbake
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** 2-4K 3 minutes on a 110°C hotplate with the lid lowered
 +
**1K 4 minutes on a 110°C hotplate with the lid lowered
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*Exposure (see characterization data below)
 
**10-17um layers
 
**10-17um layers
***Contact Alingers 12-16 sec
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***Contact Aligners 12-16 sec
***Stepper 0.27-0.3 sec, Focus -30-0.
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***Stepper 0.22-0.24 sec, Focus:-50
 
**>17um  
 
**>17um  
***Contact Alingers 20-22sec
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***Contact Aligners 20-24sec
*Bake
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*Post Exposure Bake
 
** For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
 
** For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
 
**For a 2K spin - 1.5 minutes on a 90° hotplate with the lid lowered
 
**For a 2K spin - 1.5 minutes on a 90° hotplate with the lid lowered
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*Develop on the CEE Develop stations using 726 DP 60-60
 
*Develop on the CEE Develop stations using 726 DP 60-60
 
*Hard Bake
 
*Hard Bake
**For wet etching or platting a hard bake at 110°C is recommended.
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**Wet processing: hard bake at 110°C for 1 minute
 
*Removal
 
*Removal
**For thickness <17um spins removal as normal. (ash, PRS-2000, nanostrip)
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**If wafers have been through a plasma you MUST start with a Oxygen ash to remove most the pr. You can follow with PRS-2000 or nanostrip
**For thickness >17um
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**If wafer have been through any other process you can use Oxygen plasma, PRS-2000, or nanostrip.
***PRS-2000 at 60°C for 10-15 minutes, or
 
***Ash at temp lower than 100°C to break through RIE hardened layer
 
***PRS-2000 after ash to remove most of PR
 
  
 
==Characterization==
 
==Characterization==
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===Characterization Matrices===
 
===Characterization Matrices===
*Exposure time vs Spin Speed on Contact Aligners
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*Contact Aligners: Exposure time vs Spin Speed
 
[[File:Az12xt 2-4K crosssections.jpg|500px]]
 
[[File:Az12xt 2-4K crosssections.jpg|500px]]
  
*Exposure time on Contact Aligners vs Development time
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*Contact Aligner: 1K spin, Softbake and PEB tests
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[[file:AZ 12xt, 1k spin SB and PEB tests.jpg|500px]]
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*Contact Aligner: Exposure time vs Development time. 1K spin CEE 100.
 
[[File:1k spin cross sections.jpg|500px]]
 
[[File:1k spin cross sections.jpg|500px]]
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*Exposure time vs Focus on Stepper
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[[File:EXPO cross section AZ12xt.jpeg|500px]]
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===Process Test===
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*Wet Etch
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[[File:Az12xt 10min BHF etch.jpg|500px]]
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*DRIE
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[[File:AZ12xt DRIE.jpg|500px]]
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*Step Coverage
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[[File:Az12xt stepcoverage.jpg|300px]]
  
 
==Data Sheets==
 
==Data Sheets==
 
* [https://drive.google.com/file/d/1JzyiG9o0T74NMCGicedBsqQanjQH4jT2/view?usp=sharing| Technical Data Sheet]
 
* [https://drive.google.com/file/d/1JzyiG9o0T74NMCGicedBsqQanjQH4jT2/view?usp=sharing| Technical Data Sheet]
 
* [https://drive.google.com/file/d/13p2-yEuNxjgP3S_66dVDvDZqnIE6TTUH/view?usp=sharing| Safety Data Sheet]
 
* [https://drive.google.com/file/d/13p2-yEuNxjgP3S_66dVDvDZqnIE6TTUH/view?usp=sharing| Safety Data Sheet]

Latest revision as of 17:41, 18 January 2022

About this Process
Process Details
Equipment AZ 12XT
Technology Lithography
Chemicals Used AZ 12XT, AZ 726
Date Created 10/19/2021


AZ 12XT is a chemical enhanced positive tone photo resist (PR). In a chemical enhanced PR the exposure step creates a latent image and a week acid in the PR. The chemical reaction that makes the PR soluble in developer happens during the post exposure bake (PEB). This makes the length and temperature of the PEB extremely important. One of the advantages of the chemical enhance resits for thick resist is that it eliminate the waiting steps. The resist holds up well in RIE, DRIE, wet etching and plating. We have seen some PR cracking after gold platting but have had no plating in the cracks or peeling of the PR.

Users should note that this is not a DNQ resist and is not compatible with the image reversal process used in the YES-310TA.

Announcements

  • On 1/18/22 our contact aligner lamps are being re calibrated. This may increase the required exposure by up to 22%. This page will be updated after we have time verify the new exposure times.

Procedure

for 10-25um layers

  • HMDS in YES Image Reversal Oven
  • Spin AZ 12xt
    • When dispensing the AZ 12xt try to spread the puddle around as you dispense. You can get good even coverage with less resist this way.
    • AZ 12xt is a high viscosity resist and will create stringers or cotton candy when spun.
    • For 4 inch or larger samples you need to knock down the stringers with a swab or acetone between samples.
  • Softbake
    • 2-4K 3 minutes on a 110°C hotplate with the lid lowered
    • 1K 4 minutes on a 110°C hotplate with the lid lowered
  • Exposure (see characterization data below)
    • 10-17um layers
      • Contact Aligners 12-16 sec
      • Stepper 0.22-0.24 sec, Focus:-50
    • >17um
      • Contact Aligners 20-24sec
  • Post Exposure Bake
    • For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
    • For a 2K spin - 1.5 minutes on a 90° hotplate with the lid lowered
    • For a 1K spin - 4 minutes on a 90° hotplate with the lid lowered
  • Develop on the CEE Develop stations using 726 DP 60-60
  • Hard Bake
    • Wet processing: hard bake at 110°C for 1 minute
  • Removal
    • If wafers have been through a plasma you MUST start with a Oxygen ash to remove most the pr. You can follow with PRS-2000 or nanostrip
    • If wafer have been through any other process you can use Oxygen plasma, PRS-2000, or nanostrip.

Characterization

Spin Curve

AZ 12xt spin curve on the CEE 100

Characterization Matrices

  • Contact Aligners: Exposure time vs Spin Speed

Az12xt 2-4K crosssections.jpg

  • Contact Aligner: 1K spin, Softbake and PEB tests

AZ 12xt, 1k spin SB and PEB tests.jpg

  • Contact Aligner: Exposure time vs Development time. 1K spin CEE 100.

1k spin cross sections.jpg

  • Exposure time vs Focus on Stepper

EXPO cross section AZ12xt.jpeg

Process Test

  • Wet Etch

Az12xt 10min BHF etch.jpg

  • DRIE

AZ12xt DRIE.jpg

  • Step Coverage

Az12xt stepcoverage.jpg

Data Sheets