Difference between revisions of "AZ 12XT"
Jump to navigation
Jump to search
| Line 59: | Line 59: | ||
[[File:Az12xt 2-4K crosssections.jpg|500px]] | [[File:Az12xt 2-4K crosssections.jpg|500px]] | ||
| − | *1K Spin, Softbake and PEB tests | + | *1K Spin, Softbake and PEB tests, contact alingers |
[[file:AZ 12xt, 1k spin SB and PEB tests.jpg|500px]] | [[file:AZ 12xt, 1k spin SB and PEB tests.jpg|500px]] | ||
| − | *Exposure time on Contact Aligners vs Development time | + | *Exposure time on Contact Aligners vs Development time. 1K spin CEE 100. |
[[File:1k spin cross sections.jpg|500px]] | [[File:1k spin cross sections.jpg|500px]] | ||
Revision as of 14:34, 19 October 2021
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | AZ 12XT |
| Technology | Lithography |
| Chemicals Used | AZ 12XT, AZ 726 |
Az 12XT is a chemical enhanced positive tone photo resist (PR). In a chemical enhanced PR the exposure step creates a latent image and a week acid in the PR. The chemical reaction that makes the PR soluble in developer happens during the post exposure bake (PEB). This makes the length and temperature of the PEB extremely important. One of the advantages of the chemical enhance resits for thick resist is that it eliminate the waiting steps.
Users should note that this is not a DNQ resist and is not compatible with the image reversal process used in the YES-310TA.
Contents
Procedure
for 10-25um layers
- HMDS in YES Image Reversal Oven
- Spin AZ 12xt
- Softbake
- 2-4K 3 minutes on a 110°C hotplate with the lid lowered
- 1K 4 minutes on a 110°C hotplate with the lid lowered
- Exposure
- 10-17um layers
- Contact Alingers 12-16 sec
- Stepper 0.22-0.24 sec, Focus -30 to -50
- >17um
- Contact Alingers 20-24sec
- 10-17um layers
- Bake
- For 3 and 4k spins - 1 minute on a 90° hotplate with the lid lowered
- For a 2K spin - 1.5 minutes on a 90° hotplate with the lid lowered
- For a 1K spin - 4 minutes on a 90° hotplate with the lid lowered
- Develop on the CEE Develop stations using 726 DP 60-60
- Hard Bake
- For wet etching or platting hard bake at 110°C for 1 minute
- Removal
- For thickness <17um spins removal as normal. (ash, PRS-2000, nanostrip)
- For thickness >17um
- PRS-2000 at 60°C for 10-15 minutes, or
- Ash at temp lower than 100°C to break through RIE hardened layer
- PRS-2000 after ash to remove most of PR
Characterization
Spin Curve
AZ 12xt spin curve on the CEE 100
Characterization Matrices
- Exposure time vs Spin Speed on Contact Aligners
- 1K Spin, Softbake and PEB tests, contact alingers
- Exposure time on Contact Aligners vs Development time. 1K spin CEE 100.
- Exposure time vs Focus on Stepper
Wet Etch
