Difference between revisions of "Contrast Enhancement Material (CEM)"
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==Processes== | ==Processes== | ||
| − | CEM is used on conjunction with | + | CEM is used on conjunction with [[photoresist]] to enhance it ability to resolve fine features. The following process steps should be performed after the soft bake step for the photoresist. |
| + | {{note|For this process, the bowl must be lined with aluminum foil.|reminder}} | ||
| + | {{note|The film will remain somewhat tacky so it is not well suited to contact alignment.}} | ||
* Do your normal photo resist process through soft bake. | * Do your normal photo resist process through soft bake. | ||
* Apply CEM 365iS at the [[CEE 100CB photoresist spinner]] using recipe #4 | * Apply CEM 365iS at the [[CEE 100CB photoresist spinner]] using recipe #4 | ||
| − | |||
** Spread for 5 seconds at 500rpm | ** Spread for 5 seconds at 500rpm | ||
** Spin at 4000 rpm for 30 seconds | ** Spin at 4000 rpm for 30 seconds | ||
| − | |||
* Expose your sample | * Expose your sample | ||
** Exposure times will need to be increased 10-30% from your standard resist exposure time | ** Exposure times will need to be increased 10-30% from your standard resist exposure time | ||
Revision as of 17:32, 8 August 2017
 Warning: | This page has not been released yet. |
Contrast enhancement is a microlithography technique which extends the practical limits of optical lithography systems. This improvement in resolution, depth of focus and reduced interference, allows the fabrication of new and denser integrated circuits without the required capital equipment investment
Contents
Processes
CEM is used on conjunction with photoresist to enhance it ability to resolve fine features. The following process steps should be performed after the soft bake step for the photoresist.
For this process, the bowl must be lined with aluminum foil.
The film will remain somewhat tacky so it is not well suited to contact alignment.
- Do your normal photo resist process through soft bake.
- Apply CEM 365iS at the CEE 100CB photoresist spinner using recipe #4
- Spread for 5 seconds at 500rpm
- Spin at 4000 rpm for 30 seconds
- Expose your sample
- Exposure times will need to be increased 10-30% from your standard resist exposure time
- Rinse your sample in water to remove CEM material
- ACS has a "DI Rinse 30 seconds" recipe
- Proceed with lithography as normal
Process SOPs
- There are currently no process SOPs defined for this chemical.
Equipment
- CEE_100CB_photoresist_spinner with special training from the tool engineer.
Technical Data Sheet
Safety Data Sheet
References
- Other links that are useful
