Contrast Enhancement Material (CEM)

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Contrast enhancement is a microlithography technique which extends the practical limits of optical lithography systems. This improvement in resolution, depth of focus and reduced interference, allows the fabrication of new and denser integrated circuits without the required capital equipment investment


CEM is used on conjunction with photoresist to enhance it ability to resolve fine features. The following process steps should be performed after the soft bake step for the photoresist.

This process must be performed in the CEE 100CB photoresist spinner and the bowl must be lined with aluminum foil.
The film will remain somewhat tacky so it is not well suited to contact alignment.
  • Do your normal photo resist process through soft bake.
  • Apply CEM 365iS at the CEE 100CB photoresist spinner using recipe #4
    • Spread for 5 seconds at 500rpm
    • Spin at 4000 rpm for 30 seconds
  • Expose your sample
    • Exposure times will need to be increased 10-30% from your standard resist exposure time
  • Rinse your sample in water to remove CEM material
    • ACS has a "DI Rinse 30 seconds" recipe
  • Proceed with lithography as normal

Process SOPs

  • There are currently no process SOPs defined for this chemical.


Technical Data Sheet

Safety Data Sheet


  • Other links that are useful