Difference between revisions of "Deposition"

From LNF Wiki
Jump to navigation Jump to search
Line 8: Line 8:
  
 
===Chemical vapor deposition (CVD)===
 
===Chemical vapor deposition (CVD)===
Chemical vapor deposition (CVD) consists of the substrate being exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. There are many methods for enhancing the chemical reaction rates of the precursors. The LNF has thirteen [[LPCVD_equipment| Low Pressure CVD (LPCVD)]] furnace tubes and four [[PECVD_equipment| Plasma Enhanced CVD (PECVD)]] systems.   
+
Chemical vapor deposition (CVD) consists of the substrate being exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. There are many methods for enhancing the chemical reaction rates of the precursors. The LNF has thirteen [[LPCVD_equipment| Low Pressure CVD (LPCVD)]] furnace tubes and five [[PECVD_equipment| Plasma Enhanced CVD (PECVD)]] chambers.   
  
 
===Electrodeposition/ Electroplating/ Electrochemical deposition (ECD)===
 
===Electrodeposition/ Electroplating/ Electrochemical deposition (ECD)===
Line 15: Line 15:
 
===Atomic layer deposition (ALD)===
 
===Atomic layer deposition (ALD)===
 
[https://en.wikipedia.org/wiki/Atomic_layer_deposition Atomic Layer Deposition (ALD)] at the LNF is performed on the Oxford OpAL ALD system that currently offers three films Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]]), Hafnia/Hafnium Oxide ([[HfO2|HfO<sub>2</sub>]]), and Zinc Oxide ([[ZnO|ZnO]]).
 
[https://en.wikipedia.org/wiki/Atomic_layer_deposition Atomic Layer Deposition (ALD)] at the LNF is performed on the Oxford OpAL ALD system that currently offers three films Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]]), Hafnia/Hafnium Oxide ([[HfO2|HfO<sub>2</sub>]]), and Zinc Oxide ([[ZnO|ZnO]]).
 
  
 
==Figures of merit==
 
==Figures of merit==

Revision as of 14:28, 9 November 2015

Deposition is any process that grows, coats, or otherwise transfers a material onto the substrate.

Technologies

Typical technologies include physical vapor deposition (PVD), chemical vapor deposition (CVD), electrodeposition/ electroplating or electrochemical deposition (ECD), and atomic layer deposition (ALD).

Physical vapor deposition (PVD)

Physical vapor deposition (PVD) describes a variety of vacuum deposition methods used to deposit thin films by the condensation of a vaporized form of the desired film material onto various substrates.

Chemical vapor deposition (CVD)

Chemical vapor deposition (CVD) consists of the substrate being exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. There are many methods for enhancing the chemical reaction rates of the precursors. The LNF has thirteen Low Pressure CVD (LPCVD) furnace tubes and five Plasma Enhanced CVD (PECVD) chambers.

Electrodeposition/ Electroplating/ Electrochemical deposition (ECD)

Electrodeposition

Atomic layer deposition (ALD)

Atomic Layer Deposition (ALD) at the LNF is performed on the Oxford OpAL ALD system that currently offers three films Alumina/Aluminum Oxide (Al2O3), Hafnia/Hafnium Oxide (HfO2), and Zinc Oxide (ZnO).

Figures of merit

Deposition rate

Refractive index

Stress

Thermal budget

Wet etch rate (WER)