Difference between revisions of "Doping diffusion"

From LNF Wiki
Jump to navigation Jump to search
Line 52: Line 52:
  
 
==Further reading==
 
==Further reading==
 +
*[http://lnf-wiki.eecs.umich.edu/wiki/User_Resources#LNF_Tech_Talks_.28technology_seminar_series.29 LNF Tech Talk for Doping diffusion is Coming Soon!]
 
* Other stuff, e.g. technology workshop slides
 
* Other stuff, e.g. technology workshop slides
 
* External links (can be in another section below, if appropriate)
 
* External links (can be in another section below, if appropriate)

Revision as of 08:52, 31 March 2020

Doping diffusion
Technology Details
Technology Thermal processing
Equipment List of doping diffusion equipment
Warning Warning: This page has not been released yet.

Doping diffusion is a process used to introduce impurities (phoshorous, boron) into silicon semiconductor wafers.

Equipment

Tempress S5T1 - Phosphorous Diffusion

The Tempress S5T1 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the diffusion process to deposit dope silicon wafers with phosphorous.

Tempress S5T3 - Boron Diffusion 4"

The Tempress S5T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the diffusion process to deposit dope silicon wafers with phosphorous.

Materials

  • Phosphorous (liquid source)
  • Boron (solid source)

Method of operation

Describe how the technology works.

Parameters

Parameter 1

Main article: Parameter 1

Applications

  • MEMS

Complete tool list

See also

Other related wiki pages

References


Further reading