File:350nm lines low reflection.jpg
Revision as of 20:13, 11 September 2019 by Wrightsh (talk | contribs) (Stepper exposure matrix 350nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop)

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Stepper exposure matrix 350nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly).
100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop
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current | 11:59, 12 September 2019 | ![]() | 6,804 × 851 (371 KB) | Wrightsh (talk | contribs) | Stepper exposure matrix 350nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake, 110C 90 sec PEB, AZ 300 25sec ACS deve... |
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