Difference between revisions of "File:400nm lines low reflection.jpg"
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Revision as of 20:23, 11 September 2019
Stepper exposure matrix 400nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly).
100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 11:59, 12 September 2019 |  | 9,355 × 852 (494 KB) | Wrightsh (talk | contribs) | Stepper exposure matrix 400nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake, 110C 90 sec PEB, AZ 300 25sec ACS deve... |
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