File:400nm lines low reflection.jpg

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Revision as of 21:13, 11 September 2019 by Wrightsh (talk | contribs) (Stepper exposure matrix 400nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop)
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Stepper exposure matrix 400nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly).

100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop

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current12:59, 12 September 2019Thumbnail for version as of 12:59, 12 September 20199,355 × 852 (494 KB)Wrightsh (talk | contribs)Stepper exposure matrix 400nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake, 110C 90 sec PEB, AZ 300 25sec ACS deve...
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