File:400nm trenches low reflection.jpg

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Revision as of 20:31, 11 September 2019 by Wrightsh (talk | contribs) (Stepper exposure matrix 400nm isolated trenches in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop)
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Stepper exposure matrix 400nm isolated trenches in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop

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current12:07, 12 September 2019Thumbnail for version as of 12:07, 12 September 20194,252 × 852 (375 KB)Wrightsh (talk | contribs)Stepper exposure matrix 400nm isolated trenches in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake, 110C 90 sec PEB, AZ 300 25sec ACS de...
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