File:500nm lines low reflection.jpg
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Stepper exposure matrix 500nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly).
100C 90 sec softbake 110C 90 sec PEB AZ 300 25sec ACS develop
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current | 12:00, 12 September 2019 | ![]() | 8,504 × 852 (491 KB) | Wrightsh (talk | contribs) | Stepper exposure matrix 500nm isolated lines in 0.97µm of SPR 955. Substrate is Si, 5nm SiO2, 34nm Si3N4, 5nm SiO2 and should have ~10% reflection at 365nm (couldn't measure this directly). 100C 90 sec softbake, 110C 90 sec PEB, AZ 300 25sec ACS deve... |
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