Difference between revisions of "GSI PECVD"

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{{#vardefine:toolid|21040}}{{#vardefine:technology|PECVD}}{{#vardefine:restriction|2}}{{
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{{#vardefine:toolid|21040}}{{#vardefine:technology|PECVD}}{{#vardefine:restriction|2}}{{infobox equipment
infobox equipment
 
 
|caption = GSI ULTRADEP 2000 PECVD System
 
|caption = GSI ULTRADEP 2000 PECVD System
 
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
 
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
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==Capabilities==
 
==Capabilities==
 
<!--A more general description of what the tool is capable of doing.-->
 
<!--A more general description of what the tool is capable of doing.-->
* Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.  
+
 
* Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
+
*Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
* Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)  
+
*Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
* Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
+
*Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
 +
*Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
  
 
==System Overview==
 
==System Overview==
 
===Hardware Details===
 
===Hardware Details===
* Gases
+
 
 +
*Gases
 
**Standard Gasbox Mounted MFC's
 
**Standard Gasbox Mounted MFC's
 
***[[Silane|SI<sub>H<sub>4</sub>]] - 300 sccm
 
***[[Silane|SI<sub>H<sub>4</sub>]] - 300 sccm
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***[[Helium|He<sub>]] - 500 sccm
 
***[[Helium|He<sub>]] - 500 sccm
 
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
 
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
* Pressure
+
*Pressure
 
**Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
 
**Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
 
**Load-lock utilizes Alcatel ACP 28G dry pump.
 
**Load-lock utilizes Alcatel ACP 28G dry pump.
**Deposition processes operate between 1.5T to 4.5T  
+
**Deposition processes operate between 1.5T to 4.5T
* Chuck
+
*Chuck
**Heater block 100°C - 350°C
+
**Heater block 100°C - 350°C (actual temperature is ~15% higher than setpoint)
* RF
+
*RF
 
**Comdel dual frequency generator-  
 
**Comdel dual frequency generator-  
*** RF1: 1000 W, 13.56 MHz
+
***RF1: 1000 W, 13.56 MHz
*** RF2: 200 W, 420 kHz
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***RF2: 200 W, 420 kHz
 
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
 
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
 
**420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
 
**420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
  
 
===Substrate Requirements===
 
===Substrate Requirements===
* 100 mm (4") wafers and pieces  
+
 
* Substrate material:
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*100 mm (4") wafers and pieces
 +
*Substrate material:
 
**Silicon
 
**Silicon
 
**Quartz
 
**Quartz
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**Glass
 
**Glass
 
**GaAs
 
**GaAs
* Aluminum carrier is used for all runs.  
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*Aluminum carrier is used for all runs.
* Maximum substrate thickness allowed is <800um (thickness + bow).
+
*Maximum substrate thickness allowed is <800um (thickness + bow).
  
 
===Material Restrictions===
 
===Material Restrictions===
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==Checkout Procedure==
 
==Checkout Procedure==
 
<!-- Describe the checkout procedure for the tool. For example: -->
 
<!-- Describe the checkout procedure for the tool. For example: -->
# Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].
+
 
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
+
#Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].
# A tool engineer will contact you to arrange a time for initial training.
+
#Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
# One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
+
#A tool engineer will contact you to arrange a time for initial training.
# Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
+
#One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
 +
#Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
  
 
==Maintenance==  
 
==Maintenance==  
 
<!-- Describe standard maintenance/qualification tests here -->
 
<!-- Describe standard maintenance/qualification tests here -->
*Chamber maintenance is performed after every 30 um's of deposition.  
+
 
 +
*Chamber maintenance is performed after every 50 um's of deposition.
 
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 
 
<!--
 
<!--
 
===Process Name===
 
===Process Name===

Revision as of 09:51, 7 February 2020

GSI PECVD
21040.jpg
GSI ULTRADEP 2000 PECVD System
Equipment Details
Technology PECVD
Materials Restriction Semi-Clean
Material Processed SiO2, Si3N4, SiOxNy
Sample Size 100 mm and pieces
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Standard Processes
User Processes User Processes
Maintenance Maintenance


The GSI ULTRADEP 2000 is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system with standard operating temperatures of 200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit SiO2, Si3N4, and SiOxNy on substrates up to 100 mm diameter.

Announcements

Capabilities

  • Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
  • Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
  • Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
  • Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms

System Overview

Hardware Details

  • Gases
    • Standard Gasbox Mounted MFC's
      • SIH4 - 300 sccm
      • SIH4 - 5 sccm
      • O2 - 1000 sccm
      • NH3 - 1000 sccm
      • N2O - 2000 sccm
      • NF3 - 500 sccm
      • He - 500 sccm
      • N2 - 1000 sccm
  • Pressure
    • Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
    • Load-lock utilizes Alcatel ACP 28G dry pump.
    • Deposition processes operate between 1.5T to 4.5T
  • Chuck
    • Heater block 100°C - 350°C (actual temperature is ~15% higher than setpoint)
  • RF
    • Comdel dual frequency generator-
      • RF1: 1000 W, 13.56 MHz
      • RF2: 200 W, 420 kHz
    • Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
    • 420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.

Substrate Requirements

  • 100 mm (4") wafers and pieces
  • Substrate material:
    • Silicon
    • Quartz
    • Sapphire
    • Glass
    • GaAs
  • Aluminum carrier is used for all runs.
  • Maximum substrate thickness allowed is <800um (thickness + bow).

Material Restrictions

The GSI PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are several targeted SiO2 and Si3N4 processes supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

  1. Read through the System Overview and the SOP.
  2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
  3. A tool engineer will contact you to arrange a time for initial training.
  4. One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
  5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Chamber maintenance is performed after every 50 um's of deposition.
  • Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.