Difference between revisions of "GSI PECVD"

From LNF Wiki
Jump to navigation Jump to search
 
(47 intermediate revisions by 4 users not shown)
Line 1: Line 1:
−
{{lead too long}}
+
{{#vardefine:toolid|21040}}{{#vardefine:technology|PECVD}}{{#vardefine:restriction|2}}{{infobox equipment
−
<!-- Set the resource ID, 5 digit # found on the scheduler -->
+
|caption = GSI ULTRADEP 2000 PECVD System
−
{{#vardefine:toolid|21040}}
+
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
−
<!-- Set the Process Technology (see subcategories on Equipment page) -->
 
−
{{#vardefine:technology|PECVD}}
 
−
<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->
 
−
{{#vardefine:restriction|2}}
 
−
{{infobox equipment
 
−
|caption = GSI ULTRA 2000 PECVD
 
−
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>3</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
 
 
|mask =
 
|mask =
−
|size = 100mm and Pieces
+
|size = 100 mm and pieces
 
|chemicals =
 
|chemicals =
 
|gases =  
 
|gases =  
 
|overview = [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview]
 
|overview = [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview]
 
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP]
 
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP]
−
|processes = [https://docs.google.com/a/lnf.umich.edu/spreadsheets/d/1B7g547iesF0Z4T6NLduxVSidUuMjBIJnXk37JGhdpa4/preview Standard Processes]
+
|processes = [https://docs.google.com/spreadsheets/d/16H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/preview Standard Processes]
 
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processes]]
 
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processes]]
 
|maintenance = [https://docs.google.com/document/d/1gWjGUFD0jdYEUP0Te8fmZ1pSWeNKt0VPTzQ3a7ND5Ac/preview Maintenance]
 
|maintenance = [https://docs.google.com/document/d/1gWjGUFD0jdYEUP0Te8fmZ1pSWeNKt0VPTzQ3a7ND5Ac/preview Maintenance]
 
}}
 
}}
−
 
+
The [[{{PAGENAME}}|GSI ULTRADEP 2000]] is a [[PECVD|Plasma Enhanced Chemical Vapor Deposition (PECVD)]] system with standard operating temperatures of 200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], and [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]] on substrates up to 100 mm diameter.
−
{{warning|This page has not been released yet.}}
+
−
 
 
−
The GSI is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system configured to deposit SiO2, Si3N4, and SiOxNy on substrates up to 100mm diameter. This is a single wafer system that deposits film on one side of the substrate at a time. Deposition temperature may range from 100C to 380C. Standard recipes deposit at 200C or 380C. Substrate heating is accomplished with the utilization of a heater block. The heater block does not contain active cooling. This system includes a dual frequency RF power delivery system with 13.56MHz as the primary power component. High frequency utilizes an auto-matching network w/ built in V/I probe on the output and low frequency utilizes a fixed matching network. The 13.56MHz is superimposed onto the 420KHz (when RF1 and RF2 are both used) and is capacitively coupled through the showerhead electrode. A wafer carrier must be used for 100mm and smaller substrates. All component parameters (except temperature) are displayed in system interface as percentage of full scale (ex. RF1 set to 32 is interpreted as 32% of 1000W’s or 320W’s).
 
−
 
 
 
==Announcements==
 
==Announcements==
−
*Update this with announcements as necessary
 
  
 
==Capabilities==
 
==Capabilities==
 
<!--A more general description of what the tool is capable of doing.-->
 
<!--A more general description of what the tool is capable of doing.-->
−
* Standard recipes Oxide 200 and Oxide 380 are optimized for average refractive index of 1.46 +/-0.006.  
+
 
−
* Standard recipes Nitr 200 Conv and Nitr 380 Conv are optimized for average refractive index of 2.00 +/-0.006.
+
*Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
−
* Standard recipe Oxide 200 LS is optimized for low stress (<60MPa for >1um Films)  
+
*Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
−
* Standard recipe Oxide 200 THIN is optimized for minimum porosity of films 1500-5000 angstroms  
+
*Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
 +
*Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
  
 
==System Overview==
 
==System Overview==
 
===Hardware Details===
 
===Hardware Details===
−
* Gases
+
 
 +
*Gases
 
**Standard Gasbox Mounted MFC's
 
**Standard Gasbox Mounted MFC's
−
***[[Silane|SI<sub>H<sub>4</sub>]] - 300 sccm
+
***[[Silane|SiH<sub>4</sub>]] - 300 sccm
−
***[[Silane|SI<sub>H<sub>4</sub>]] - 5 sccm
+
***[[Silane|SiH<sub>4</sub>]] - 5 sccm
−
***[[Oxygen|O<sub>2</sub>]] - 1000 sccm
+
***[[Ammonia|NH<sub>3</sub>]] - 1000 sccm
−
***[[Ammonia|N<sub>H<sub>3</sub>]] - 1000 sccm
 
 
***[[Nitrous oxide|N<sub>2</sub>O<sub>]] - 2000 sccm
 
***[[Nitrous oxide|N<sub>2</sub>O<sub>]] - 2000 sccm
−
***[[Nitrogen trifluoride|N<sub>F<sub>3</sub>]] - 500 sccm
+
***[[Nitrogen trifluoride|NF<sub>3</sub>]] - 500 sccm
 
***[[Helium|He<sub>]] - 500 sccm
 
***[[Helium|He<sub>]] - 500 sccm
 
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
 
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
−
* Pressure
+
*Pressure
−
**Process Chamber utilizes Ebara A70W dry pump, butterfly valve, and 10T Baratron.
+
**Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
 
**Load-lock utilizes Alcatel ACP 28G dry pump.
 
**Load-lock utilizes Alcatel ACP 28G dry pump.
 
**Deposition processes operate between 1.5T to 4.5T
 
**Deposition processes operate between 1.5T to 4.5T
−
* Chuck
+
*Chuck
−
**Heater block 100°C - 380°C
+
**Heater block 100°C - 350°C (actual substrate temperature is ~15% higher than setpoint)
−
* RF
+
*RF
−
**Comdel dual frequency generator- RF1 1000W 13.56MHz RF2 200W 420kHz
+
**Comdel dual frequency generator-  
 +
***RF1: 1000 W, 13.56 MHz
 +
***RF2: 200 W, 420 kHz
 
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
 
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
−
**420kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
+
**420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
  
 
===Substrate Requirements===
 
===Substrate Requirements===
−
* 100mm (4") wafers and pieces  
+
 
−
* Substrate material:
+
*100 mm (4") wafers and pieces
 +
*Substrate material:
 
**Silicon
 
**Silicon
 +
**Quartz
 +
**Sapphire
 
**Glass
 
**Glass
−
**GaAs  
+
**GaAs
−
* Aluminum carrier is used for all runs.  
+
*Aluminum carrier is used for all runs.
−
* Maximum substrate thickness is 2mm.
+
*Maximum substrate thickness allowed is <800um (thickness + bow).
  
 
===Material Restrictions===
 
===Material Restrictions===
Line 70: Line 65:
  
 
==Supported Processes==  
 
==Supported Processes==  
−
{{expand section}}
+
There are several targeted SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> processes supported by the LNF.  Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.
−
There are several processes for this tool supported by the LNF.  Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.
 
  
 
{{#widget:Iframe
 
{{#widget:Iframe
−
|url=https://docs.google.com/spreadsheets/u/1/d/1B7g547iesF0Z4T6NLduxVSidUuMjBIJnXk37JGhdpa4/pubhtml?gid=0&single=true    
+
|url=https://docs.google.com/spreadsheets/d/16H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/edit#gid=1660640889    
−
|width=850
+
|width=900
−
|height=550
+
|height=600
 
|border=0
 
|border=0
 
}}
 
}}
−
 
−
If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system as a GSI PECVD "General Question" type ticket.
 
  
 
==Standard Operating Procedure==
 
==Standard Operating Procedure==
Line 88: Line 80:
 
==Checkout Procedure==
 
==Checkout Procedure==
 
<!-- Describe the checkout procedure for the tool. For example: -->
 
<!-- Describe the checkout procedure for the tool. For example: -->
−
# Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].
+
 
−
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
+
#Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].
−
# A tool engineer will contact you to arrange a time for initial training.
+
#Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overview section of the User Manual located at the tool.
−
# One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
+
#A tool engineer will contact you to coordinate a time for training.
−
# Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
+
#One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.
 +
#Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
  
 
==Maintenance==  
 
==Maintenance==  
−
{{expand section|the process name section is blank}}
 
 
<!-- Describe standard maintenance/qualification tests here -->
 
<!-- Describe standard maintenance/qualification tests here -->
−
*Chamber maintenance is performed after every 30um's of deposition.  
+
 
 +
*Chamber maintenance is performed after every 75 um's of deposition.
 
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
−
 
+
<!--
 
===Process Name===
 
===Process Name===
−
<!-- This is an example a chart published with etch data. You can just replace the url with your own. -->
 
 
{{#widget:Iframe
 
{{#widget:Iframe
 
|url=chart url
 
|url=chart url
Line 108: Line 100:
 
|border=0
 
|border=0
 
}}
 
}}
 +
-->

Latest revision as of 17:55, 4 March 2022

GSI PECVD
21040.jpg
GSI ULTRADEP 2000 PECVD System
Equipment Details
Technology PECVD
Materials Restriction Semi-Clean
Material Processed SiO2, Si3N4, SiOxNy
Sample Size 100 mm and pieces
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Standard Processes
User Processes User Processes
Maintenance Maintenance


The GSI ULTRADEP 2000 is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system with standard operating temperatures of 200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit SiO2, Si3N4, and SiOxNy on substrates up to 100 mm diameter.

Announcements

Capabilities

  • Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
  • Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
  • Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
  • Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms

System Overview

Hardware Details

  • Gases
    • Standard Gasbox Mounted MFC's
      • SiH4 - 300 sccm
      • SiH4 - 5 sccm
      • NH3 - 1000 sccm
      • N2O - 2000 sccm
      • NF3 - 500 sccm
      • He - 500 sccm
      • N2 - 1000 sccm
  • Pressure
    • Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
    • Load-lock utilizes Alcatel ACP 28G dry pump.
    • Deposition processes operate between 1.5T to 4.5T
  • Chuck
    • Heater block 100°C - 350°C (actual substrate temperature is ~15% higher than setpoint)
  • RF
    • Comdel dual frequency generator-
      • RF1: 1000 W, 13.56 MHz
      • RF2: 200 W, 420 kHz
    • Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
    • 420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.

Substrate Requirements

  • 100 mm (4") wafers and pieces
  • Substrate material:
    • Silicon
    • Quartz
    • Sapphire
    • Glass
    • GaAs
  • Aluminum carrier is used for all runs.
  • Maximum substrate thickness allowed is <800um (thickness + bow).

Material Restrictions

The GSI PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.

Approved materials


Supported Processes

There are several targeted SiO2 and Si3N4 processes supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

  1. Read through the System Overview and the SOP.
  2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overview section of the User Manual located at the tool.
  3. A tool engineer will contact you to coordinate a time for training.
  4. One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.
  5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Chamber maintenance is performed after every 75 um's of deposition.
  • Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
Retrieved from "https://lnf-wiki.eecs.umich.edu/wiki/index.php?title=GSI_PECVD&oldid=21332"