Difference between revisions of "GSI PECVD"

From LNF Wiki
Jump to navigation Jump to search
(Created page with "<!-- Set the resource ID, 5 digit # found on the scheduler --> {{#vardefine:toolid|21040}} <!-- Set the Process Technology (see subcategories on Equipment page) --> {{#vardefi...")
 
 
(74 intermediate revisions by 4 users not shown)
Line 1: Line 1:
<!-- Set the resource ID, 5 digit # found on the scheduler -->
+
{{#vardefine:toolid|21040}}{{#vardefine:technology|PECVD}}{{#vardefine:restriction|2}}{{infobox equipment
{{#vardefine:toolid|21040}}
+
|caption = GSI ULTRADEP 2000 PECVD System
<!-- Set the Process Technology (see subcategories on Equipment page) -->
+
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
{{#vardefine:technology|PECVD}}
 
<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->
 
{{#vardefine:restriction|2}}
 
{{infobox equipment
 
|caption =  
 
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>3</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
 
 
|mask =
 
|mask =
|size = 100mm and Pieces
+
|size = 100 mm and pieces
 
|chemicals =
 
|chemicals =
 
|gases =  
 
|gases =  
|overview = [[{{PAGENAME}}#System_Overview | System Overview]]
+
|overview = [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview]
 
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP]
 
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP]
|processes = [[{{PAGENAME}}/Processes|Supported Processes]]
+
|processes = [https://docs.google.com/spreadsheets/d/16H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/preview Standard Processes]
 
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processes]]
 
|userprocesses = [[LNF_User:{{PAGENAME}}_User_Processes|User Processes]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
+
|maintenance = [https://docs.google.com/document/d/1gWjGUFD0jdYEUP0Te8fmZ1pSWeNKt0VPTzQ3a7ND5Ac/preview Maintenance]
 
}}
 
}}
 
+
The [[{{PAGENAME}}|GSI ULTRADEP 2000]] is a [[PECVD|Plasma Enhanced Chemical Vapor Deposition (PECVD)]] system with standard operating temperatures of 200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], and [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]] on substrates up to 100 mm diameter. 
{{warning|This page has not been released yet.}}
+
 
 
<!-- Insert the tool description here -->
 
 
 
 
==Announcements==
 
==Announcements==
*Update this with announcements as necessary
 
  
 
==Capabilities==
 
==Capabilities==
 
<!--A more general description of what the tool is capable of doing.-->
 
<!--A more general description of what the tool is capable of doing.-->
* Etch Rate
+
 
* Resolution
+
*Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
* Aspect Ratio
+
*Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
* Thickness range
+
*Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
 +
*Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
  
 
==System Overview==
 
==System Overview==
 
===Hardware Details===
 
===Hardware Details===
* Gases
+
 
* Pressure
+
*Gases
* Chuck
+
**Standard Gasbox Mounted MFC's
* Chamber
+
***[[Silane|SiH<sub>4</sub>]] - 300 sccm
* RF / Power Specs
+
***[[Silane|SiH<sub>4</sub>]] - 5 sccm
* Chemicals
+
***[[Ammonia|NH<sub>3</sub>]] - 1000 sccm
 +
***[[Nitrous oxide|N<sub>2</sub>O<sub>]] - 2000 sccm
 +
***[[Nitrogen trifluoride|NF<sub>3</sub>]] - 500 sccm
 +
***[[Helium|He<sub>]] - 500 sccm
 +
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
 +
*Pressure
 +
**Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
 +
**Load-lock utilizes Alcatel ACP 28G dry pump.
 +
**Deposition processes operate between 1.5T to 4.5T
 +
*Chuck
 +
**Heater block 100°C - 350°C (actual substrate temperature is ~15% higher than setpoint)
 +
*RF
 +
**Comdel dual frequency generator-
 +
***RF1: 1000 W, 13.56 MHz
 +
***RF2: 200 W, 420 kHz
 +
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
 +
**420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
  
 
===Substrate Requirements===
 
===Substrate Requirements===
* Wafer Size
+
 
* Wafer type
+
*100 mm (4") wafers and pieces
* Any mounting?
+
*Substrate material:
* Wafer thickness
+
**Silicon
 +
**Quartz
 +
**Sapphire
 +
**Glass
 +
**GaAs
 +
*Aluminum carrier is used for all runs.
 +
*Maximum substrate thickness allowed is <800um (thickness + bow).
  
 
===Material Restrictions===
 
===Material Restrictions===
Line 52: Line 65:
  
 
==Supported Processes==  
 
==Supported Processes==  
<!-- We recommend creating a subpage detailing the supported processes for the tool, which will be generated if you leave the link below. Alternatively, you may include the information on this page. In that case, the Supported Processes document from the equipment manual can be included here, using {{#widget:GoogleDoc|key=googledocid}} -->
+
There are several targeted SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> processes supported by the LNF.  Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.
  
There are several processes for this tool supported by the LNF, which are described in more detail on the [[/Processes/]] page.
+
{{#widget:Iframe
 
+
|url=https://docs.google.com/spreadsheets/d/16H1aYS0FEt4WCMe4svAQBBD3gXRxOs4geAmOHdQi1wA/edit#gid=1660640889   
<!-- If you allow custom recipes, let users know to contact a tool engineer, and you may also create the link below which will create a page that users can add custom recipes to. -->
+
|width=900
In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on [[LNF User:{{BASEPAGENAME}} User Processes|{{BASEPAGENAME}} User Processes]]. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
+
|height=600
 +
|border=0
 +
}}
  
 
==Standard Operating Procedure==
 
==Standard Operating Procedure==
 
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". -->
 
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". -->
{{#widget:GoogleDoc|key=googledocid}}
+
{{#widget:GoogleDoc|key=1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc}}
  
 
==Checkout Procedure==
 
==Checkout Procedure==
 
<!-- Describe the checkout procedure for the tool. For example: -->
 
<!-- Describe the checkout procedure for the tool. For example: -->
# Read through this page and the Standard Operating Procedure above.
 
# Complete the training request form [http://examplelink.com here].
 
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.
 
# A tool engineer will schedule a time for initial training.
 
# Practice with your mentor or another authorized user until you are comfortable with tool operation.
 
# Complete the SOP quiz [http://examplelink.com here].
 
# Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
 
  
==Tool Qualification==  
+
#Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].
 +
#Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overview section of the User Manual located at the tool.
 +
#A tool engineer will contact you to coordinate a time for training.
 +
#One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.
 +
#Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
 +
 
 +
==Maintenance==  
 
<!-- Describe standard maintenance/qualification tests here -->
 
<!-- Describe standard maintenance/qualification tests here -->
  
 +
*Chamber maintenance is performed after every 75 um's of deposition.
 +
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 +
<!--
 
===Process Name===
 
===Process Name===
<!-- This is an example a chart published with etch data. You can just replace the url with your own. -->
 
 
{{#widget:Iframe
 
{{#widget:Iframe
 
|url=chart url
 
|url=chart url
 
|width=800
 
|width=800
|height=400
+
|height=600
 
|border=0
 
|border=0
 
}}
 
}}
 +
-->

Latest revision as of 16:55, 4 March 2022

GSI PECVD
21040.jpg
GSI ULTRADEP 2000 PECVD System
Equipment Details
Technology PECVD
Materials Restriction Semi-Clean
Material Processed SiO2, Si3N4, SiOxNy
Sample Size 100 mm and pieces
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Standard Processes
User Processes User Processes
Maintenance Maintenance


The GSI ULTRADEP 2000 is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system with standard operating temperatures of 200°C and 350°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit SiO2, Si3N4, and SiOxNy on substrates up to 100 mm diameter.

Announcements

Capabilities

  • Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006.
  • Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.
  • Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
  • Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms

System Overview

Hardware Details

  • Gases
    • Standard Gasbox Mounted MFC's
      • SiH4 - 300 sccm
      • SiH4 - 5 sccm
      • NH3 - 1000 sccm
      • N2O - 2000 sccm
      • NF3 - 500 sccm
      • He - 500 sccm
      • N2 - 1000 sccm
  • Pressure
    • Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
    • Load-lock utilizes Alcatel ACP 28G dry pump.
    • Deposition processes operate between 1.5T to 4.5T
  • Chuck
    • Heater block 100°C - 350°C (actual substrate temperature is ~15% higher than setpoint)
  • RF
    • Comdel dual frequency generator-
      • RF1: 1000 W, 13.56 MHz
      • RF2: 200 W, 420 kHz
    • Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
    • 420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.

Substrate Requirements

  • 100 mm (4") wafers and pieces
  • Substrate material:
    • Silicon
    • Quartz
    • Sapphire
    • Glass
    • GaAs
  • Aluminum carrier is used for all runs.
  • Maximum substrate thickness allowed is <800um (thickness + bow).

Material Restrictions

The GSI PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are several targeted SiO2 and Si3N4 processes supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

  1. Read through the System Overview and the SOP.
  2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overview section of the User Manual located at the tool.
  3. A tool engineer will contact you to coordinate a time for training.
  4. One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.
  5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Chamber maintenance is performed after every 75 um's of deposition.
  • Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.