Gallium arsenide

From LNF Wiki
Revision as of 07:48, 22 April 2020 by Woobc (talk | contribs) (→‎Equipment)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search
Warning Warning: This page has not been released yet.

Gallium arsenide (GaAs) is a compound made from the elements gallium and arsenide. Gallium arsenide is a III-V semiconductor which has a direct band-gap. Gallium arsenide is a common substrate in the lab.

Equipment

Gallium arsenide is a common substrate in the lab.

Deposition Equipment

  • Tools in the LNF for depositing this material.

Etching Equipment

  • Tools in the LNF for etching this material.

Characterization Equipment

Applications

Gallium arsenide is a common substrate in the lab. Gallium arsenide is often used in devices such as microwave frequency integrated circuits, solar cells, or optical windows.

Processes

Deposition Processes

  • List of technologies for depositing this material and relevant process information specific to this material associated with this equipment/type of process.

Etching Processes

  • List of technologies for etching/pattering this material and relevant process information specific to this material associated with this equipment/type of process.
  • Wet Etching
  • RIE
    • Tool material restriction must be considered when selecting an RIE tool as it will impact what tools you can use for future process steps.
    • RIE will give straighter sidewalls and less undercut than wet etching.

Characterization Processes

  • List of techniques for metrology/characterization can be used with this material and relevant process information specific to this material associated with this equipment/type of process.

Other Relevant Material Information

Technical Data

  • Charts or specific LNF related data for this material.

References

  • Citations/references for this material, review articles. If possible, examples of users publications which includes the material.