Gallium arsenide

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Gallium arsenide (GaAs) is a compound made from the elements gallium and arsenide. Gallium arsenide is a III-V semiconductor which has a direct band-gap. Gallium arsenide is a common substrate in the lab.

Equipment

Gallium arsenide is a common substrate in the lab.

Deposition Equipment

• Tools in the LNF for depositing this material.

Etching Equipment

• Tools in the LNF for etching this material.

Characterization Equipment

• Material Properties
  • Woollam M-2000 Ellipsometer
  • NanoSpec 6100
  • Flexus 2320-S
  • Rame-Hart Goniometer

Applications

Gallium arsenide is a common substrate in the lab. Gallium arsenide is often used in devices such as microwave frequency integrated circuits, solar cells, or optical windows.

Processes

Deposition Processes

• List of technologies for depositing this material and relevant process information specific to this material associated with this equipment/type of process.

Etching Processes

• List of technologies for etching/pattering this material and relevant process information specific to this material associated with this equipment/type of process.
• Wet Etching

• RIE
  • Tool material restriction must be considered when selecting an RIE tool as it will impact what tools you can use for future process steps.
  • RIE will give straighter sidewalls and less undercut than wet etching.

Characterization Processes

• List of techniques for metrology/characterization can be used with this material and relevant process information specific to this material associated with this equipment/type of process.

Technical Data

• Charts or specific LNF related data for this material.

References

• Citations/references for this material, review articles. If possible, examples of users publications which includes the material.