Difference between revisions of "Gold"
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{{#vardefine:restriction|3}} <!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals, 4 = varies --> | {{#vardefine:restriction|3}} <!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals, 4 = varies --> | ||
| − | + | Gold is generally used for conductive layers and occasionally in bonding applications. Due to its high mobility it is not allowed in most semiconductor equipment. Gold is commonly refereed to by it's atomic symbol Au. | |
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| − | Gold is generally used for conductive layers and occasionally in bonding applications. Due to its high mobility it is not allowed in most semiconductor equipment. | ||
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| + | ==Processing Equipment== | ||
===Deposition Equipment=== | ===Deposition Equipment=== | ||
| − | + | *[[Lab 18-2]] | |
| − | + | *[[Enerjet Evaporator]] | |
| − | + | *[[Cooke Evaporator]] | |
| − | + | *[[SJ-20 Evaporator]] | |
| − | + | *[[Angstrom Engineering Evovac Evaporator]] | |
===Etching Equipment=== | ===Etching Equipment=== | ||
| − | + | *[[Acid Bench 12]] | |
| − | + | *[[Acid Bench 73]] | |
| − | + | *[[Acid Bench 82]] | |
| − | + | *[[Plasmatherm 790]] | |
| − | + | *[[STS Glass Etcher]] | |
| + | ==Applications== | ||
| + | *Conducting Layer | ||
| + | *Bond Pads | ||
| + | *Bonding material for [[Eutectic bonding]] or [[Thermal Compression bonding]]. | ||
| − | * | + | ==Processes== |
| + | ===Deposition Processes=== | ||
| + | *[[Electron_beam_evaporation|E-beam evaporation]] | ||
| + | *[[Sputter_deposition|Sputter deposition]] | ||
| + | *[[Gold Plating]] | ||
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===Etch Processes=== | ===Etch Processes=== | ||
| − | + | *[[Wet etching]] | |
| − | Wet etching is done by using Transene [[Gold Etch]] 8111. Gold etchant 8111 is a cyanide free based etchant that provides strong definition with minimal undercutting. Gold etchant is potassium iodide and iodine based. You can get a good estimate of etch gold etch rates through other chemicals from ["Etch rates for micromachining processing"] and ["Etch rates for micromachining processing-Part II"] | + | **Wet etching is done by using Transene [[Gold Etch]] 8111. Gold etchant 8111 is a cyanide free based etchant that provides strong definition with minimal undercutting. Gold etchant is potassium iodide and iodine based. You can get a good estimate of etch gold etch rates through other chemicals from ["Etch rates for micromachining processing"] and ["Etch rates for micromachining processing-Part II"] |
==References== | ==References== | ||
| − | *[http://en.wikipedia.org/wiki/ | + | *[http://en.wikipedia.org/wiki/ Wikipedia: Gold] |
Latest revision as of 11:53, 8 April 2020
 Warning: | This page has not been released yet. |
Gold is generally used for conductive layers and occasionally in bonding applications. Due to its high mobility it is not allowed in most semiconductor equipment. Gold is commonly refereed to by it's atomic symbol Au.
Contents
Processing Equipment
Deposition Equipment
- Lab 18-2
- Enerjet Evaporator
- Cooke Evaporator
- SJ-20 Evaporator
- Angstrom Engineering Evovac Evaporator
Etching Equipment
Applications
- Conducting Layer
- Bond Pads
- Bonding material for Eutectic bonding or Thermal Compression bonding.
Processes
Deposition Processes
Etch Processes
- Wet etching
- Wet etching is done by using Transene Gold Etch 8111. Gold etchant 8111 is a cyanide free based etchant that provides strong definition with minimal undercutting. Gold etchant is potassium iodide and iodine based. You can get a good estimate of etch gold etch rates through other chemicals from ["Etch rates for micromachining processing"] and ["Etch rates for micromachining processing-Part II"]
